The Thermal Stability of One-Transistor Ferroelectric Memory With Pt-Pb5Ge3O11-Ir-Poly-SiO2-Si Gate Stack

IEEE Transactions on Electron Devices

Volumn 50, Issue 11, 2003, Pages 2280-2285

  Li, Tingkai ^a   Hsu, Sheng Teng ^a   Ulrich, Bruce D ^a   Evans, David R ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

Ferroelectric; Metal organic chemical vapor deposition (MOCVD); One transistor (1T) memory; Pb5Ge3O 11; Thermal stability

Indexed keywords

DATA STORAGE EQUIPMENT; FERROELECTRIC DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICA; THERMODYNAMIC STABILITY;

GATE STACK;

GATES (TRANSISTOR);

EID: 0242269418     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.818820     Document Type: Article

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