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Volumn 40, Issue 1, 2009, Pages 280-283
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Al and Sn-doped zinc indium oxide thin film transistors for AMOLED back-plane
a a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINA;
ALUMINUM;
ALUMINUM OXIDE;
ANNEALING;
INDIUM COMPOUNDS;
MAGNETRON SPUTTERING;
ORGANIC LIGHT EMITTING DIODES (OLED);
THIN FILM CIRCUITS;
TIN COMPOUNDS;
ACTIVE LAYER;
FIELD-EFFECT MOBILITIES;
ON/OFF CURRENT RATIO;
POST ANNEALING;
POST-ANNEALING TEMPERATURE;
RF-MAGNETRON SPUTTERING;
SUBTHRESHOLD SWING;
ZINC INDIUM OXIDE;
THIN FILM TRANSISTORS;
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EID: 85044574161
PISSN: 0097966X
EISSN: 21680159
Source Type: Conference Proceeding
DOI: 10.1889/1.3256763 Document Type: Conference Paper |
Times cited : (28)
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References (9)
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