Depletion-type thin-film transistors with a ferroelectric insulator

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 458-460

  Prins, M W J ^a   Zinnemers, S E ^a,b   Cillessen, J F M ^a   Giesbers, J B ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRODES; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; SEMICONDUCTOR DOPING; STRONTIUM COMPOUNDS; TIN COMPOUNDS;

CHANNEL DEPLETION; CHARGE INJECTION; LEAD ZIRCONIUM TITANATE; STRONTIUM RUTHENIUM OXIDE; TIN DIOXIDE;

THIN FILM TRANSISTORS;

EID: 0030853041     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118180     Document Type: Article

References (17)

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