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Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor's channel layer

(7) Yin, Huaxiang a Kim, Sunil a Kim, Chang Jung a Song, Ihun a Park, Jaechul a Kim, Sangwook a Park, Youngsoo a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; ELECTRIC CURRENTS; ELECTRON TUBE DIODES; THICK FILMS;

AMORPHOUS OXIDES; CHANNEL LAYERS; ENERGY LEVELS; EXPERIMENTAL DATUMS; GATE INSULATORS; NEGATIVE CHARGES; NONVOLATILE MEMORIES; PROGRAM/ERASE; SHALLOW DONOR LEVELS; STRESSING TIMES; TRANSISTOR CHANNELS; WIDE BANDS;

AMORPHOUS FILMS;

EID: 55149107223 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3012386 Document Type: Article

Times cited : (97)

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