Ferroelectric properties of YMnO3 epltaxial films for ferroelectric-gate field-effect transistors

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5563-5567

  Ito, Daisuke ^a   Fujimura, Norifumi ^a   Yoshimura, Takeshi ^a   Ito, Taichiro ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; POLARIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL FILMS;

YTTRIUM COMPOUNDS;

EID: 0038580988     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564862     Document Type: Article

References (30)

1. J. L. Moll and Y. Tarui, IEEE Trans. Electron Devices ED-10, 338 (1963).
2. H. Ishiwara, Jpn. J. Appl. Phys. 32, 442 (1993).
3. K. Sugibuchi, Y. Kurogi, and N. Endo, J. Appl. Phys. 46, 2877 (1975).
4. T. A. Rost, H. Lin, and T. A. Rabson, Appl. Phys. Lett. 59, 3654 (1991).
5. J. F. Scott and C. A. Araujo, Science 246, 1400 (1989).
6. C. A. Araujo, J. D. Cuchiaro, L. D. Mcmillan, M. C. Scott, and J. F. Scott, Nature (London) 374, 627 (1995).
7. T. Hirai, K. Teramoto, T. Nishi, T. Goto, and Y. Tarui, Jpn. J. Appl. Phys. 33, 5519 (1994).
8. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Jpn. J. Appl. Phys. 33, 5207 (1994).
9. I. Sakai, E. Tokumitu, and H. Ishiwara, Jpn. J. Appl. Phys. 35, 4987 (1996).
10. Y. Oishi, Y. Matsumuro and M. Okuyama, Jpn. J. Appl. Phys. 36, 5896 (1997).
11. T. Hirai, Y. Fujisaki, K. Nagashima, H. Koike, and Y. Tarui, Jpn. J. Appl. Phys. 36, 5908 (1997).
12. J. Senzaki, K. Kurihara, N. Nomura, O. Mitsunaga, Y. Iwasaki, and T. Ueno, Jpn. J. Appl. Phys. 37, 5150 (1998).
13. T. Kijima and H. Matsunaga, Jpn. J. Appl. Phys. 37, 5171 (1998).
14. Y. Fujimori, N. Izumi, T. Nakamura, A. Kamisawa, and Y. Shigematsu, Jpn. J. Appl. Phys. 36, 5935 (1997).
15. Y. Fujimori, N. Izumi, T. Nakamura, and A. Kamisawa, Jpn. J. Appl. Phys. 37, 5207 (1998).
16. N. Fujimura, T. Ishida, T. Yoshimura, and T. Ito, Appl. Phys. Lett. 69, 1011 (1996).
17. N. Fujimura, S. Azuma, N. Aoki, T. Yoshimura, and T. Ito, J. Appl. Phys. 80, 7084 (1996).
18. T. Yoshimura, N. Fujimura, and T. Ito, Appl. Phys. Lett. 73, 414 (1998).
19. T. Yoshimura, N. Fujimura, D. Ito, and T. Ito, J. Appl. Phys. 87, 3444 (2000).
20. E. F. Bertaut, F. Forrat, and P. H. Fang, Compt. Rend. 256, 1958 (1963).
21. V. A. Bokov, G. A. Smolenskii, S. A. Kizhaev, and I. E. Myl'nikova, Sov. Phys.-Solid State 5, 2646 (1964).
22. G. A. Smolenskii and V. A. Bokov, J. Appl. Phys. 35, 915 (1964).
23. I. G. Ismailzade and S. A. Kizhaev, Sov. Phys.-Solid State 7, 236 (1965).
24. Z. J. Huang, Y. Cao, Y. Y. Sum, Y. Y. Xue, and C. W. Chu, Phys. Rev. B 56, 2623 (1997).
25. D. Ito, N. Fujimura, and T. Ito. Jpn. J. Appl. Phys. 39, 5525 (2000).
26. S. Imada, T. Kuraoka, E. Tokumitsu, and H. Ishiwara, Jpn. J. Appl. Phys. 40, 666 (2001).
27. D. Ito, N. Fujimura, K. Kakuno, and T. Ito, Ferroelectrics 271, 87, (2002).
28. K. Ashikaga and T. Ito, J. Appl. Phys. 85, 7471 (1999).
29. K. Takemura, M. Ozgul, V. Bornand, S. Trolier-McKinstry, and C. A. Randall, Appl. Phys. Lett. 88, 7272 (2000).
30. K. Kakuno, D. Ito, N. Fujimura, and T. Ito, J. Cryst. Growth 237-239, 487 (2002).