TaOx-based resistive switching memories: Prospective and challenges

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-17

  Prakash, Amit ^a   Jana, Debanjan ^a   Maikap, Siddheswar ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Memory; Resistive switching; RRAM

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRODES; IRIDIUM COMPOUNDS; RRAM; SWITCHING; TANTALUM OXIDES; TITANIUM COMPOUNDS;

HIGH TEMPERATURE; HIGH-RESISTANCE STATE; INERT ELECTRODES; OPERATION CURRENTS; REAL APPLICATIONS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; SWITCHING MODES;

PLATINUM COMPOUNDS;

EID: 84887296995     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-418     Document Type: Review

References (140)

1. Hutchby J, Garner M: Assessment of the potential & maturity of selected emerging research memory technologies workshop & ERD/ERM working group meeting (April 6-7, 2010). 2010. http://www.itrs.net/Links/2010ITRS/2010Update/ ToPost/ERD_ERM_2010FINALReportMemoryAssessment_ITRS.pdf.
2. Keeney SN: A 130 nm generation high density Etox™ flash memory technology. In Tech Dig - Int Electron Devices Meet2001. Washington, DC; 2001:2.5.1-2.5.4
3. Ray SK, Maikap S, Banerjee W, Das S: Nanocrystals for silicon based light emitting and memory devices. J Phys D Appl Phys 2013, 46:153001
4. Kato Y, Yamada T, Shimada Y: 0.18-μm nondestructive readout FeRAM using charge compensation technique. IEEE Trans Electron Devices 2005, 52:2616
5. Setter N, Damjanovic D, Eng L, Fox G, Gevorgian S, Hong S, Kingon A, Kohlstedt H, Park NY, Stephenson GB, Stolitchnov I, Taganstev AK, Taylor DV, Yamada T, Streiffer S: Ferroelectric thin films: review of materials, properties, and applications. J Appl Phys 2006, 100:051606
6. Durlam M, Chung Y, DeHerrera M, Engel BN, Grynkewich G, Martino B, Nguyen B, Salter J, Shah P, Slaughter JM: MRAM memory for embedded and stand alone systems. In Proceedings of the IEEE International Conference on Integrated Circuit Design and Technology. Austin; 2007:1-4
7. Sekikawa M, Kiyoyama K, Hasegawa H, Miura K, Fukushima T, Ikeda S, Tanaka T, Ohno H, Koyanagi M: A novel SPRAM (SPin-transfer torque RAM)-based reconfigurable logic block for 3D-stacked reconfigurable spin processor. In Tech Dig - Int Electron Devices Meet. San Francisco, CA; 2008:1-3
8. Raoux S, Burr GW, Breitwisch MJ, Rettner CT, Chen YC, Shelby RM, Salinga M, Krebs D, Chen SH, Lung HL, Lam CH: Phase-change random access memory: a scalable technology. IBM J Res Dev 2008, 52:465
9. Beck A, Bednorz JG, Gerber C, Rossel C, Widmer D: Reproducible switching effect in thin oxide films for memory applications. Appl Phys Lett 2000, 77:139
10. Baek IG, Lee MS, Seo S, Lee MJ, Seo DH, Suh DS, Park JC, Park SO, Kim HS, Yoo IK, Chung UI, Moon JT: Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses. In Tech Dig - Int Electron Devices Meet. San Francisco, CA; 2004:587-590
11. Kozicki MN, Gopalan C, Balakrishnan M, Park M, Mitkova M: Non-volatile memory based on solid electrolytes. In Proceedings 2004 Non-Volatile Memory Technology Symposium. Orlando; 2004:10-17
12. Chen A, Haddad S, Wu YC, Fang TN, Lan Z, Avanzino S, Pangrle S, Buynoski M, Rathor M, Cai W, Tripsas N, Bill C, VanBuskirk M, Taguchi M: Non-volatile resistive switching for advanced memory applications. In Tech Dig - Int Electron Devices Meet. Washington, DC; 2005:746-749
13. Liu CY, Wu PH, Wang A, Jang WY, Young JC, Chiu KY, Tseng TY: Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film. IEEE Electron Device Lett 2005, 26:351
14. Waser R, Aono M: Nanoionics-based resistive switching memories. Nat Mater 2007, 6:833
15. Sawa A: Resistive switching in transition metal oxides. Mater Today 2008, 11:28
16. Lee HY, Chen PS, Wu TY, Chen YS, Wang CC, Tzeng PJ, Lin CH, Chen F, Lien CH, Tsai MJ: Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM. In Tech Dig - Int Electron Devices Meet. San Francisco, CA; 2008:1-4
17. Waser R, Dittmann R, Staikov G, Szot K: Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges. Adv Mater 2009, 21:2632
18. Akinaga H, Shima H: Resistive random access memory (ReRAM) based on metal oxides. Proc IEEE 2010, 98:2237
19. Pan F, Chen C, Wang ZS, Yang YC, Yang J, Zeng F: Nonvolatile resistive switching memories-characteristics, mechanisms and challenges. Proc Natl Acad Sci USA 2010, 20:1
20. Park J, Lee W, Choe M, Jung S, Son M, Kim S, Park S, Shin J, Lee D, Siddik M, Woo J, Choi G, Cha E, Lee T, Hwang H: Quantized conductive filament formed by limited Cu source in sub-5nm era. In Tech Dig - Int Electron Devices Meet. Washington, DC; 2011:3.7.1-3.7.4
21. Torrezan AC, Strachan JP, Medeiros-Ribeiro G, Williams RS: Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology 2011, 22:485203
22. Rahaman SZ, Maikap S, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ: Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface. Nanoscale Res Lett 2012, 7:345
23. Wong HSP, Lee HY, Yu S, Chen YS, Wu Y, Chen PS, Lee B, Chen FT, Tsai MJ: Metal-oxide RRAM. Proc IEEE 1951, 2012:100
24. Liu Q, Sun J, Lv H, Long S, Yin K, Wan N, Li Y, Sun L, Liu M: Resistive switching: real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based RERAM. Adv Mater 2012, 24:1774
25. Yang JJ, Strukov DB, Stewart DR: Memristive devices for computing. Nat Nanotechnol 2013, 8:13
26. International technology roadmap for semiconductors 2011 edition emerging research devices. www.itrs.net/Links/2011itrs/2011Tables/ERD_2011Tables.xlsx.
27. Burr GW, Kurdi BN, Scott JC, Lam CH, Gopalakrishnan K, Shenoy RS: Overview of candidate device technologies for storage-class memory. IBM J Res Dev 2008, 52:449
28. Ho C-H, Hsu C-L, Chen C-C, Liu J-T, Wu C-S, Huang C-C, Hu C, Fu-Liang Y: 9 nm half-pitch functional resistive memory cell with <1 μA programming current using thermally oxidized sub-stoichiometric WOx film. In Tech Dig - Int Electron Devices Meet. San Francisco, CA; 2010:19.1.1-19.1.4
29. Lee HY, Chen YS, Chen PS, Gu PY, Hsu YY, Wang SM, Liu WH, Tsai CH, Sheu SS, Chiang PC, Lin WP, Lin CH, Chen WS, Chen FT, Lien CH, Tsai MJ: Evidence and solution of over-RESET problem for HfOx based resistive memory with sub-ns switching speed and high endurance. In Tech Dig - Int Electron Devices Meet. San Francisco, CA; 2010:19.7.1-19.7.4
30. Kim S, Biju KP, Jo M, Jung S, Park J, Lee J, Lee W, Shin J, Park S, Hwang H: Effect of scaling WOx-based RRAMs on their resistive switching characteristics. IEEE Electron Device Lett 2011, 32:671
31. 2-x bilayer structures. Nat Mater 2011, 10:625
32. Hickmott TW: Low-frequency negative resistance in thin anodic oxide films. J Appl Phys 1962, 33:2669
33. Nielsen PH, Bashara NM: The reversible voltage-induced initial resistance in the negative resistance sandwich structure. IEEE Trans Electron Devices 1964, 11:243
34. Gibbons JF, Beadle WE: Switching properties of thin NiO films. Solid-State Electron 1964, 7:785
35. Simmons JG, Verderber RR: New conduction and reversible memory phenomena in thin insulating films. Proc R Soc London, Ser A 1967, 301:77
36. Chua LO: Memristors-the missing circuit element. IEEE Trans Circuit Theory 1971, CT-18:507
37. Tsuruoka T, Terabe K, Hasegawa T, Aono M: Forming and switching mechanisms of a cation-migration-based oxide resistive memory. Nanotechnology 2010, 21:425205
38. Chen YS, Lee HY, Chen PS, Wu TY, Wang CC, Tzeng PJ, Chen F, Tsai MJ, Lien C: An ultrathin forming-free HfOx resistance memory with excellent electrical performance. IEEE Electron Device Lett 2010, 31:1473
39. Qinan M, Zhenguo J, Junhua X: Realization of forming-free ZnO-based resistive switching memory by controlling film thickness. J Phys D Appl Phys 2010, 43:395104
40. Stille S, Lenser C, Dittmann R, Koehl A, Krug I, Muenstermann R, Perlich J, Schneider CM, Klemradt U, Waser R: Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes. Appl Phys Lett 2012, 100:223503
41. Prakash A, Maikap S, Chiu H-C, Tien T-C, Lai C-S: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Res Lett 2013, 8:288
42. Akinaga H, Shima H, Takano F, Inoue IH, Takagi H: Resistive switching effect in metal/insulator/metal heterostructures and its application for non-volatile memory. IEEJ T Electr 2007, 2:453
43. Szot K, Speier W, Bihlmayer G, Waser R: Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nat Mater 2006, 5:312
44. 2 resistive switching memory. Nat Nanotechnol 2010, 5:148
45. Xu Z, Bando Y, Wang W, Bai X, Golberg D: Real-time in situ HRTEMresolved resistance switching of Ag2S nanoscale ionic conductor. ACS Nano 2010, 4:2515
46. Rahaman SZ, Maikap S, Chen WS, Lee HY, Chen FT, Tien TC, Tsai MJ: Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament. J Appl Phys 2012, 111:063710
47. Yang Y, Gao P, Gaba S, Chang T, Pan X, Lu W: Observation of conducting filament growth in nanoscale resistive memories. Nat Commun 2012, 3:732
48. Rahaman SZ, Maikap S, Chen WS, Lee HY, Chen FT, Kao MJ, Tsai MJ: Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film. Appl Phys Lett 2012, 101:073106
49. Jeong HY, Lee JY, Ryu M-K, Choi S-Y: Bipolar resistive switching in amorphous titanium oxide thin film. Phys Status Solidi RRL 2010, 4:28
50. Tsui S, Baikalov A, Cmaidalka J, Sun YY, Wang YQ, Xue YY, Chu CW, Chen L, Jacobson AJ: Field-induced resistive switching in metal-oxide interfaces. Appl Phys Lett 2004, 85:317
51. Jeon SH, Park BH, Lee J, Lee B, Han S: First-principles modeling of resistance switching in perovskite oxide material. Appl Phys Lett 2006, 89:042904
52. Seong D-j, Jo M, Lee D, Hwang H: HPHA effect on reversible resistive switching of P/Nb -doped SrTiO3 Schottky junction for nonvolatile memory application. Electrochem Solid-State Lett 2007, 10:H168
53. Nian YB, Strozier J, Wu NJ, Chen X, Ignatiev A: Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Phys Rev Lett 2007, 98:146403
54. Sawa A, Fujii T, Kawasaki M, Tokura Y: Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/ Pr0.7Ca0.3MnO3 interface. Appl Phys Lett 2004, 85:4073
55. Fujii T, Kawasaki M, Sawa A, Akoh H, Kawazoe Y, Tokura Y: Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3. Appl Phys Lett 2005, 86:012107
56. Rozenberg MJ, Inoue IH, Sánchez MJ: Nonvolatile memory with multilevel switching: a basic model. Phys Rev Lett 2004, 92:178302
57. Fors R, Khartsev SI, Grishin AM: Giant resistance switching in metalinsulator- manganite junctions: evidence for Mott transition. Phys Rev B 2005, 71:045305
58. Oka T, Nagaosa N: Interfaces of correlated electron systems: proposed mechanism for colossal electroresistance. Phys Rev Lett 2005, 95:266403
59. Kund M, Beitel G, Pinnow CU, Röhr T, Schumann J, Symanczyk R, Ufert KD, Müller G: Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20 nm. In Tech Dig - Int Electron Devices Meet. Washington, DC; 2005:754-757
60. Rahaman SZ, Maikap S, Das A, Prakash A, Wu YH, Lai CS, Tien TC, Chen WS, Lee HY, Chen FT, Tsai MJ, Chang LB: Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte. Nanoscale Res Lett 2012, 7:614
61. Kozicki MN, Balakrishnan M, Gopalan C, Ratnakumar C, Mitkova M: Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes. In 2005 Non-Volatile Memory Technology Symposium. Dallas, TX; 2005:83
62. 2/W conductive-bridge memory cells. IEEE Electron Device Lett 2012, 33:257
63. Kaeriyama S, Sakamoto T, Sunamura H, Mizuno M, Kawaura H, Hasegawa T, Terabe K, Nakayama T, Aono M: A nonvolatile programmable solidelectrolyte nanometer switch. IEEE J Solid-State Circuits 2005, 40:168
64. Terabe K, Hasegawa T, Nakayama T, Aono M: Quantized conductance atomic switch. Nature 2005, 433:47
65. 5 resistive switch. Appl Phys Lett 2007, 91:092110
66. 5 solid electrolyte. In The 39th European Solid-State Device Research Conference and the 35th European Solid-state Circuits Conference (ESSDERC/ESSCIRC). Athens; 2009:217
67. Schindler C, Thermadam SCP, Waser R, Kozicki MN: Bipolar and unipolar resistive switching in Cu-doped SiO2. IEEE Trans Electron Devices 2007, 54:2762
68. Hsiung CP, Liao HW, Gan JY, Wu TB, Hwang JC, Chen F, Tsai MJ: Formation and instability of silver nanofilament in Ag-based programmable metallization cells. ACS Nano 2010, 4:5414
69. Liu Q, Long S, Lv H, Wang W, Niu J, Huo Z, Chen J, Liu M: Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. ACS Nano 2010, 4:6162
70. Nagata T, Haemori M, Yamashita Y, Yoshikawa H, Iwashita Y, Kobayashi K, Chikyow T: Bias application hard X-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure. Appl Phys Lett 2011, 99:223517
71. Yoon J, Choi H, Lee D, Park JB, Lee J, Seong DJ, Ju Y, Chang M, Jung S, Hwang H: Excellent switching uniformity of Cu-doped MoOx/GdOx bilayer for nonvolatile memory applications. IEEE Electron Device Lett 2009, 30:457
72. Tada M, Sakamoto T, Banno N, Aono M, Hada H, Kasai N: Nonvolatile crossbar switch using TiOx/TaSiOy solid electrolyte. IEEE Trans Electron Devices 1987, 2010:57
73. 3/Si cells. Appl Phys Lett 2011, 99:053502
74. Kim DC, Seo S, Ahn SE, Suh DS, Lee MJ, Park BH, Yoo IK, Baek IG, Kim HJ, Yim EK, Lee JE, Park SO, Kim HS, Chung UI, Moon JT, Ryu BI: Electrical observations of filamentary conductions for the resistive memory switching in NiO films. Appl Phys Lett 2006, 88:202102
75. Ielmini D, Nardi F, Cagli C: Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories. Nanotechnology 2011, 22:254022
76. Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallée C, Perniola L, De Salvo B: Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs. Solid-State Electron 2011, 58:62
77. Yang JJ, Pickett MD, Li X, Ohlberg DAA, Stewart DR, Williams RS: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat Nanotechnol 2008, 3:429
78. 2-based resistive switching devices on CMOS-compatible W-plugs. IEEE Electron Device Lett 2011, 32:1588
79. Park J, Biju KP, Jung S, Lee W, Lee J, Kim S, Park S, Shin J, Hwang H: Multibit operation of TiOx-based ReRAM by Schottky barrier height engineering. IEEE Electron Device Lett 2011, 32:476
80. 2 resistive memory using a TaON buffer layer. IEEE Electron Device Lett 2011, 32:1749
81. 2/ Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays. Nanotechnology 2010, 21:195201
82. Lee H-Y, Chen P-S, Wang C-C, Maikap S, Tzeng P-J, Lin C-H, Lee L-S, Tsai M-J: Low-power switching of nonvolatile resistive memory using hafnium oxide. Jpn J Appl Phys, Part 1 2007, 46:2175
83. Lee J, Bourim EM, Lee W, Park J, Jo M, Jung S, Shin J, Hwang H: Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications. Appl Phys Lett 2010, 97:172105
84. Walczyk D, Walczyk C, Schroeder T, Bertaud T, Sowinska M, Lukosius M, Fraschke M, Tillack B, Wenger C: Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells. Microelectron Eng 2011, 88:1133
85. Chen YY, Goux L, Clima S, Govoreanu B, Degraeve R, Kar GS, Fantini A, Groeseneken G, Wouters DJ, Jurczak M: Endurance/retention trade-off on HfO2/metal cap 1T1R bipolar RRAM. IEEE Trans Electron Devices 2013, 60:1114
86. Yu S, Chen H-Y, Gao B, Kang J, Wong HSP: HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective threedimensional cross-point architecture. ACS Nano 2013, 7:2320
87. Chen A, Haddad S, Wu YC, Fang TN, Kaza S, Lan Z: Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory. Appl Phys Lett 2008, 92:013503
88. Sun X, Li G, Chen L, Shi Z, Zhang W: Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells. Nanoscale Res Lett 2011, 6:1
89. Lin CY, Wu CY, Wu CYC-Y, Lee TC, Yang FL, Hu C, Tseng TY: Effect of top electrode material on resistive switching properties of ZrO2 film memory devices. IEEE Electron Device Lett 2007, 28:366
90. Liu Q, Long S, Wang W, Zuo Q, Zhang S, Chen J, Liu M: Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions. IEEE Electron Device Lett 2009, 30:1335
91. Wang S-Y, Lee D-Y, Tseng T-Y, Lin C-Y: Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films. Appl Phys Lett 2009, 95:112904
92. Wang SY, Lee DY, Huang TY, Wu JW, Tseng TY: Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer. Nanotechnology 2010, 21:495201
93. Chien WC, Chen YC, Lai EK, Yao YD, Lin P, Horng SF, Gong J, Chou TH, Lin HM, Chang MN, Shih YH, Hsieh KY, Liu R, Chih-Yuan L: Unipolar switching behaviors of RTO WOx RRAM. IEEE Electron Device Lett 2010, 31:126
94. 3 memory thin films. J Electrochem Soc 2007, 154:G189
95. 3/WOx bilayer dielectrics for low-power resistive switching memory applications. Jpn J Appl Phys 2011, 50:10PH01
96. 2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation. J Appl Phys 2011, 110:094104
97. 3/WOx bilayer structure. J Electrochem Soc 2012, 159:H177
98. Peng HY, Li GP, Ye JY, Wei ZP, Zhang Z, Wang DD, Xing GZ, Wu T: Electrode dependence of resistive switching in Mn-doped ZnO: filamentary versus interfacial mechanisms. Appl Phys Lett 2010, 96:192113
99. Andy S, Wendi Z, Julia Q, Han-Jen Y, Shuyi C, Zetian M, Ishiang S: Highly stable resistive switching on monocrystalline ZnO. Nanotechnology 2010, 21:125201
100. Chiu FC, Li PW, Chang WY: Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films. Nanoscale Res Lett 2012, 7:1
101. Peng CN, Wang CW, Chan TC, Chang WY, Wang YC, Tsai HW, Wu WW, Chen LJ, Chueh YL: Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation. Nanoscale Res Lett 2012, 7:1
102. Yao J, Zhong L, Natelson D, Tour JM: Intrinsic resistive switching and memory effects in silicon oxide. Appl Phys A 2011, 102:835
103. Mehonic A, Cueff S, Wojdak M, Hudziak S, Jambois O, Labbe C, Garrido B, Rizk R, Kenyon AJ: Resistive switching in silicon suboxide films. J Appl Phys 2012, 111:074507
104. Cao X, Li X, Gao X, Yu W, Liu X, Zhang Y, Chen L, Cheng X: Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications. J Appl Phys 2009, 106:073723
105. Jana D, Maikap S, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ: Formation-polarity-dependent improved resistive switching memory performance using IrOx/GdOx/WOx/W structure. Jpn J Appl Phys 2012, 51:04DD17
106. Seong DJ, Hassan M, Choi H, Lee J, Yoon J, Park JB, Lee W, Oh MS, Hwang H: Resistive-switching characteristics of Al/Pr0.7Ca0.3MnO3 for nonvolatile memory applications. IEEE Electron Device Lett 2009, 30:919
107. Cheng CH, Chin A, Yeh FS: Ultralow switching energy Ni/GeOx/HfON/TaN RRAM. IEEE Electron Device Lett 2011, 32:366
108. Prakash A, Maikap S, Rahaman S, Majumdar S, Manna S, Ray S: Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration. Nanoscale Res Lett 2013, 8:220
109. Wei Z, Kanzawa Y, Arita K, Katoh Y, Kawai K, Muraoka S, Mitani S, Fujii S, Katayama K, Iijima M, Mikawa T, Ninomiya T, Miyanaga R, Kawashima Y, Tsuji K, Himeno A, Okada T, Azuma R, Shimakawa K, Sugaya H, Takagi T, Yasuhara R, Khoriba G, Kumigashira H, Oshima M: Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism. In Tech Dig - Int Electron Devices Meet. San Francisco, CA; 2008:1-4
110. Yang JJ, Zhang MX, Strachan JP, Miao F, Pickett MD, Kelley RD, Medeiros-Ribeiro G, Williams RS: High switching endurance in TaOx memristive devices. Appl Phys Lett 2010, 97:232102
111. Zhang L, Huang R, Zhu M, Qin S, Kuang Y, Gao D, Shi C, Wang Y: Unipolar TaOx-based resistive change memory realized with electrode engineering. IEEE Electron Device Lett 2010, 31:966
112. 5 atomic switch: first-principles analyses. ACS Nano 2010, 4:6477
113. Wei Z, Takagi T, Kanzawa Y, Katoh Y, Ninomiya T, Kawai K, Muraoka S, Mitani S, Katayama K, Fujii S, Miyanaga R, Kawashima Y, Mikawa T, Shimakawa K, Aono K: Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model. In Tech Dig - Int Electron Devices Meet. Washington, DC; 2011:31.4.1-31.4.4
114. Prakash A, Maikap S, Lai CS, Tien TC, Chen WS, Lee HY, Chen FT, Kao MJ, Tsai MJ: Bipolar resistive switching memory using bilayer TaOx/WOx films. Solid-State Electron 2012, 77:35
115. Chen C, Song C, Yang J, Zeng F, Pan F: Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure. Appl Phys Lett 2012, 100:253509
116. Prakash A, Maikap S, Lai CS, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ: Improvement of uniformity of resistive switching parameters by selecting the electroformation polarity in IrOx/TaOx/WOx/W structure. Jpn J Appl Phys, Part 1 2012, 51:04DD06
117. Yang Y, Sheridan P, Lu W: Complementary resistive switching in tantalum oxide-based resistive memory devices. Appl Phys Lett 2012, 100:203112
118. Bishop SM, Bakhru H, Capulong JO, Cady NC: Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation. Appl Phys Lett 2012, 100:142111
119. Marinella MJ, Dalton SM, Mickel PR, Dodd PED, Shaneyfelt MR, Bielejec E, Vizkelethy G, Kotula PG: Initial assessment of the effects of radiation on the electrical characteristics of TaOx memristive memories. IEEE Trans Nucl Sci 2012, 59:2987
120. Ninomiya T, Wei Z, Muraoka S, Yasuhara R, Katayama K, Takagi T: Conductive filament scaling of TaOx bipolar ReRAM for improving data retention under low operation current. IEEE Trans Electron Devices 2013, 60:1384
121. Diokh T, Le-Roux E, Jeannot S, Cagli C, Jousseaume V, Nodin J-F, Gros-Jean M, Gaumer C, Mellier M, Cluzel J, Carabasse C, Candelier P, De Salvo B: Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology. Thin Solid Films 2013, 533:24
122. Mickel PR, Lohn AJ, Choi BJ, Yang JJ, Zhang M-X, Marinella MJ, James CD, Williams RS: A physical model of switching dynamics in tantalum oxide memristive devices. Appl Phys Lett 2013, 102:223502
123. Schmelzer S, Linn E, Bottger U, Waser R: Uniform complementary resistive switching in tantalum oxide using current sweeps. IEEE Electron Device Lett 2013, 34:114
124. Lee D, Woo J, Cha E, Kim S, Lee W, Park S, Hwang H: Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM. Microelectron Eng 2013, 109:385
125. Kim S, Kim S-J, Kim KM, Lee SR, Chang M, Cho E, Kim Y-B, Kim CJ, In Chung U: Physical electro-thermal model of resistive switching in bi-layered resistance-change memory. Sci Rep 2013, 3:1
126. 5 and metals for resistive random access memory electrodes engineering. Appl Phys Lett 2013, 102:062106
127. Elliman RG, Saleh MS, Kim TH, Venkatachalam DK, Belay K, Ruffell S, Kurunczi P, England J: Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM). Nucl Instrum Methods Phys Res, Sect B 2013, 307:98
128. Yang Y, Choi S, Lu W: Oxide heterostructure resistive memory. Nano Lett 2013, 13:2908
129. Garg SP, Krishnamurthy N, Awasthi A, Venkatraman M: The O-Ta (oxygen-tantalum) system. J Phase Equil 1996, 17:63
130. Birks N, Meier GH, Pettit FS: Introduction to the high-temperature oxidation of metals. Cambridge: Cambridge University Press; 2006. http://www.doitpoms. ac.uk/tlplib/ellingham_diagrams/interactive.php.
131. 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching. Appl Phys Lett 2006, 89:223509
132. Hur JH, Lee M-J, Lee CB, Kim Y-B, Kim C-J: Modeling for bipolar resistive memory switching in transition-metal oxides. Phys Rev B 2010, 82:155321
133. Yoshida C, Kinoshita K, Yamasaki T, Sugiyama Y: Direct observation of oxygen movement during resistance switching in NiO/Pt film. Appl Phys Lett 2008, 93:042106
134. Linn E, Rosezin R, Kugeler C, Waser R: Complementary resistive switches for passive nanocrossbar memories. Nat Mater 2010, 9:403
135. Long S, Lian X, Cagli C, Cartoix X, Rurali R, Miranda E, Jimenez D, Perniola L, Ming Liu M, Sune J: Quantum-size effects in hafnium-oxide resistive switching. Appl Phys Lett 2013, 102:183505
136. Long S, Cagli C, Ielmini D, Liu M, Sune J: Analysis and modeling of resistive switching statistics. J Appl Phys 2012, 111:074508
137. 2 stack on RTN and retention. In Tech Dig - Int Electron Devices Meet. Baltimore, MD; 2009:1-4
138. Chen YS, Lee HY, Chen PS, Liu WH, Wang SM, Gu PY, Hsu YY, Tsai CH, Chen WS, Chen F, Tsai MJ, Lien C: Robust high-resistance state and improved endurance of HfOx resistive memory by suppression of current overshoot. IEEE Electron Device Lett 2011, 32:1585
139. Govoreanu B, Kar GS, Chen Y, Paraschiv V, Kubicek S, Fantini A, Radu IP, Goux L, Clima S, Degraeve R, Jossart N, Richard O, Vandeweyer T, Seo K, Hendrickx P, Pourtois G, Bender H, Altimime L, Wouters DJ, Kittl JA, Jurczak M: 10 × 10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation. In Tech Dig - Int Electron Devices Meet. Washington, DC; 2011:31.6.1-31.6.4
140. Chien WC, Chen YR, Chen YC, Chuang ATH, Lee FM, Lin YY, Lai EK, Shih YH, Hsieh KY, Chih-Yuan L: A forming-free WOx resistive memory using a novel selfaligned field enhancement feature with excellent reliability and scalability. In Tech Dig - Int Electron Devices Meet. San Francisco, CA; 2010:19.2.1-19.2.4.