Resistive random access memory (ReRAM) based on metal oxides

Proceedings of the IEEE

Volumn 98, Issue 12, 2010, Pages 2237-2251

  Akinaga, Hiroyuki ^a   Shima, Hisashi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Electrochemical devices; metalinsulatormetal devices; nonvolatile memories; resistance switching

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTROCHEMICAL DEVICES; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTROCHEMICAL EFFECTS; EMERGING NON-VOLATILE MEMORY; METALINSULATORMETAL DEVICES; NON-VOLATILE MEMORY; RECENT PROGRESS; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY (RERAM);

RRAM;

EID: 78649340782     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2070830     Document Type: Conference Paper

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