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Japanese Journal of Applied Physics

Volumn 50, Issue 10 PART 2, 2011, Pages

High-κ Al2O3/WOx bilayer dielectrics for low-power resistive switching memory applications

(4) Banerjee, Writam a Rahaman, Sheikh Ziaur a Prakash, Amit a Maikap, Siddheswar a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CHEMICAL BONDINGS; DATA RETENTION; HIGH RESISTANCE; HOLE TRAPPING; LOW CURRENTS; LOW POWER; LOW-POWER OPERATION; MEMORY DEVICE; RESISTIVE SWITCHING MEMORIES; SMALL DEVICES;

ALUMINUM; CHEMICAL BONDS; HIGH RESOLUTION ELECTRON MICROSCOPY; INVESTMENTS; PHOTOELECTRON SPECTROSCOPY; SILICON COMPOUNDS; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 80054959949 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.10PH01 Document Type: Article

Times cited : (30)

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