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December
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December
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Highly Reliable TaOx ReRAM and Direct Evidence of Redox Reaction Mechanism
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December
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Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity
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December
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Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M. -J. Tasi, "Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity," IEDM Tech. Dig., pp. 105-108, December 2009.
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Oxide-Based RRAM: Uniformity Improvement Using A New Material-Oriented Methodology
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June
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B. Gao, H. W. Zhang, S. Yu, B. Sun, L. F. Liu, X. Y. Liu, Y. Wang, R. Q. Han, J. F. Kang, B. Yu, and Y. Y. Wang, "Oxide-Based RRAM : Uniformity Improvement Using A New Material-Oriented Methodology," VLSI Symp. Tech. Dig., PP. 30-31, June, 2009.
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A New Approach for Improving Operating Margin of Unipolar ReRAM using Local Minimum of Reset Voltage
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Y. Sakotsubo, M. Terai, S. Kotsuji, Y. Saito, M. Tada, Y. Yabe, and H. Hada, "A New Approach for Improving Operating Margin of Unipolar ReRAM using Local Minimum of Reset Voltage," VLSI symp. Tech. Dig., pp. 87-88, 2010.
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Diode-less Nano-scale ZrOx/HfOx RRAM Device with Excellent Switching Uniformity and Reliability for High-density Cross-point Memory Applications
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December
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J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K. P. Biju, S. Kim, S. Park, and H. Hwang, "Diode-less Nano-scale ZrOx/HfOx RRAM Device with Excellent Switching Uniformity and Reliability for High-density Cross-point Memory Applications," IEDM Tech. Dig., pp. 452-455, December 2010.
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9nm Half-Pitch Functional Resistive Memory Cell with <1ìA Programming Current Using Thermally Oxidized Sub-Stoichiometric WOx Film
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December
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C. Ho, C. -L. Shu, C. -C. Chen, J. -T. Liu, C. -S. Wu, C. -C. Huang, C. Hu, and F. -L. Yang, "9nm Half-Pitch Functional Resistive Memory Cell with <1ìA Programming Current Using Thermally Oxidized Sub-Stoichiometric WOx Film," IEDM Tech. Dig., pp. 436- 439, December 2010.
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79951842555
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Low Power Operating Bipolar TMO ReRAM for Sub 10nm Era
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December
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M. J. Kim, I. G. Baek, Y. H. Ha, S. J. Baik, J. H. Kim, D. J. Seong, S. J. Kim, Y. H. Kwon, C. R. Lim, H. K. Park, D. Gilmer, P. Kirsch, R. Jammy, Y. G. Shin, S. Choi, and C. Chung, "Low Power Operating Bipolar TMO ReRAM for Sub 10nm Era," IEDM Tech. Dig., pp. 444- 447, December 2010.
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Programmable Resistance switching in Nanoscale Two-Terminal Devices
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S. H. Jo, K. -H. Kim, and W. Lu, "Programmable Resistance switching in Nanoscale Two-Terminal Devices," Nano Letters, Vol. 9, No. 1, pp. 496-500, 2009.
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Quantized conductance atomic switch
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Complementary resistive switches for passive nanocrossbar memories
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E. Linn, R. Rosezin, C. Kugeler, and R. Waser, "Complementary resistive switches for passive nanocrossbar memories, Nature Materials, Vol. 9, pp. 403-406, May 2010.
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