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Volumn , Issue , 2011, Pages

Quantized conductive filament formed by limited Cu source in sub-5nm era

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE STATE; CONDUCTIVE FILAMENTS; CONDUCTIVE PATHS; CU IONS; ELECTRODE RADII; FABRICATION TECHNOLOGIES; MEMORY APPLICATIONS; MULTI-BITS; RESISTIVE SWITCHING; X-POINT;

EID: 84863052126     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131484     Document Type: Conference Paper
Times cited : (29)

References (12)
  • 6
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    • A New Approach for Improving Operating Margin of Unipolar ReRAM using Local Minimum of Reset Voltage
    • Y. Sakotsubo, M. Terai, S. Kotsuji, Y. Saito, M. Tada, Y. Yabe, and H. Hada, "A New Approach for Improving Operating Margin of Unipolar ReRAM using Local Minimum of Reset Voltage," VLSI symp. Tech. Dig., pp. 87-88, 2010.
    • (2010) VLSI Symp. Tech. Dig. , pp. 87-88
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  • 7
    • 79958058204 scopus 로고    scopus 로고
    • Diode-less Nano-scale ZrOx/HfOx RRAM Device with Excellent Switching Uniformity and Reliability for High-density Cross-point Memory Applications
    • December
    • J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K. P. Biju, S. Kim, S. Park, and H. Hwang, "Diode-less Nano-scale ZrOx/HfOx RRAM Device with Excellent Switching Uniformity and Reliability for High-density Cross-point Memory Applications," IEDM Tech. Dig., pp. 452-455, December 2010.
    • (2010) IEDM Tech. Dig. , pp. 452-455
    • Lee, J.1    Shin, J.2    Lee, D.3    Lee, W.4    Jung, S.5    Jo, M.6    Park, J.7    Biju, K.P.8    Kim, S.9    Park, S.10    Hwang, H.11
  • 8
    • 79960846879 scopus 로고    scopus 로고
    • 9nm Half-Pitch Functional Resistive Memory Cell with <1ìA Programming Current Using Thermally Oxidized Sub-Stoichiometric WOx Film
    • December
    • C. Ho, C. -L. Shu, C. -C. Chen, J. -T. Liu, C. -S. Wu, C. -C. Huang, C. Hu, and F. -L. Yang, "9nm Half-Pitch Functional Resistive Memory Cell with <1ìA Programming Current Using Thermally Oxidized Sub-Stoichiometric WOx Film," IEDM Tech. Dig., pp. 436- 439, December 2010.
    • (2010) IEDM Tech. Dig. , pp. 436-439
    • Ho, C.1    Shu, C.-L.2    Chen, C.-C.3    Liu, J.-T.4    Wu, C.-S.5    Huang, C.-C.6    Hu, C.7    Yang, F.-L.8
  • 10
    • 61649104641 scopus 로고    scopus 로고
    • Programmable Resistance switching in Nanoscale Two-Terminal Devices
    • S. H. Jo, K. -H. Kim, and W. Lu, "Programmable Resistance switching in Nanoscale Two-Terminal Devices," Nano Letters, Vol. 9, No. 1, pp. 496-500, 2009.
    • (2009) Nano Letters , vol.9 , Issue.1 , pp. 496-500
    • Jo, S.H.1    Kim, K.-H.2    Lu, W.3
  • 11
    • 11944255355 scopus 로고    scopus 로고
    • Quantized conductance atomic switch
    • January
    • K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono, "Quantized conductance atomic switch," Nature, Vol. 433, pp. 47-50, January 2005.
    • (2005) Nature , vol.433 , pp. 47-50
    • Terabe, K.1    Hasegawa, T.2    Nakayama, T.3    Aono, M.4
  • 12
    • 77951622926 scopus 로고    scopus 로고
    • Complementary resistive switches for passive nanocrossbar memories
    • May
    • E. Linn, R. Rosezin, C. Kugeler, and R. Waser, "Complementary resistive switches for passive nanocrossbar memories, Nature Materials, Vol. 9, pp. 403-406, May 2010.
    • (2010) Nature Materials , vol.9 , pp. 403-406
    • Linn, E.1    Rosezin, R.2    Kugeler, C.3    Waser, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.