SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 7, 2009, Pages

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2 O3 films for memristor applications

(8) Cao, Xun a Li, Xiaomin a Gao, Xiangdong a Yu, Weidong a Liu, Xinjun a Zhang, Yiwen a Chen, Lidong a Cheng, Xinhong b

a SHANGHAI INSTITUTE OF CERAMICS (China)

b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-RESISTANCE STATE; INITIAL RESISTANCE; LOW-RESISTANCE STATE; MECHANISM ANALYSIS; MEMRISTOR; METALLIC GD; NOVEL MATERIALS; ORDERS OF MAGNITUDE; POLYCRYSTALLINE THIN FILM; RESISTANCE SWITCHING; RESISTIVE SWITCHING;

GADOLINIUM; SWITCHING SYSTEMS;

RAPID SOLIDIFICATION;

EID: 70350103040 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236573 Document Type: Article

Times cited : (143)

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