Robust high-resistance state and improved endurance of HfOX resistive memory by suppression of current overshoot

IEEE Electron Device Letters

Volumn 32, Issue 11, 2011, Pages 1585-1587

  Chen, Yu Sheng ^a   Lee, Heng Yuan ^a   Chen, Pang Shiu ^b   Liu, Wen Hsing ^a   Wang, Sum Min ^a   Gu, Pei Yi ^a   Hsu, Yen Ya ^a   Tsai, Chen Han ^a   Chen, Wei Su ^a   Chen, Frederick ^a   Tsai, Ming Jinn ^a   Lien, Chenhsin ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Endurance; HfOX; High resistance state; Overshoot; RRAM

Indexed keywords

ACCELERATED DEGRADATION; COMPLIANCE CURRENT; CURRENT OVERSHOOT; EXCESS CURRENT; HFOX; HIGH-RESISTANCE STATE; OPERATION CURRENTS; OVERSHOOT; PARASITIC CAPACITANCE; RRAM;

RANDOM ACCESS STORAGE;

DURABILITY;

EID: 80055017717     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2166051     Document Type: Article

References (13)

1. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon, "Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses," in IEDM Tech. Dig.,-2004, pp. 587-590. (Pubitemid 40928360)
2. A. Chen, S. Haddad, Y. C. Wu, T. N. Fang, Z. Lan, S. Avanzino, S. Pangrle, M. Buynoski, M. Rathor, W. Cai, N. Tripsas, C. Bill, M. VanBuskirk, and M. Taguchi, "Non-volatile resistive switching for advanced memory application," in IEDM Tech. Dig.,-2005, pp. 746-749. (Pubitemid 46370958)
3. 2 based RRAM," in IEDM Tech. Dig.,-2008, pp. 297-300.
4. D. Lee, D. J. Seong, H. J. Choi, I. Jo, R. Dong, W. Xiang, S. Oh, M. Pyun, S. O. Seo, S. Heo, M. Jo, D. K. Hwang, H. K. Park, M. Chang, M. Hasan, and H. Hwang, "Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory application," in IEDM Tech. Dig.,-2006, pp. 797-800.
5. H. J. Wan, P. Zhou, L. Ye, Y. Y. Lin, T. A. Tang, H. M. Wu, and M. H. Chi, "In situ observation of compliance-current overshoot and its effect on resistive switching," IEEE Electron Device Lett., vol.-31, no. 3, pp. 246-248, Mar. 2010.
6. K. Kinoshita, K. Tsunoda, Y. Sato, H. Noshiro, S. Yagaki, M. Aoki, and Y. Sugiyama, "Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance," Appl. Phys. Lett., vol.-93, no. 3, pp. 033506, Jul. 2008.
7. D. K. Kim, D. S. Suh, and J. Park, "Pulse-programming instabilities of unipolar-type NiOx," IEEE Electron Device Lett., vol.-31, no. 6, pp. 600-602, Jun. 2010.
8. P. Y. Gu, Y. S. Chen, H. Y. Lee, P. S. Chen, W. H. Liu, W. S. Chen, Y. Y. Hsu, F. Chen, and M.-J. Tsai, "Scalability with silicon nitride encapsulation layer for Ti/HfOX pillar RRAM," in Proc. VLSI-TSA,-2010, pp. 146-147.
9. H. Y. Lee, Y. S. Chen, P. S. Chen, T. Y. Wu, F. Chen, C. C. Wang, pp. J. Tzeng, M.-J. Tsai, and C. Lien, "Low-power and nanosecond switching in robust hafnium oxide reactive memory with a thin Ti cap," IEEE Electron Device Lett., vol.-31, no. 1, pp. 44-46, Jan. 2010.
10. Y. S. Chen, H. Y. Lee, P. S. Chen, pp. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, pp. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M.-J. Tsai, "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity," in IEDM Tech. Dig.,-2009, pp. 105-108.
11. 2 stack ReRAM for low-voltage and multilevel operation," IEEE Electron Device Lett., vol.-31, no. 3, pp. 204-206, Mar. 2010.
12. M. J. Kim, I. G. Baek, Y. H. Ha, S. J. Baik, J. H. Kim, D. J. Seong, S. J. Kim, Y. H. Kwon, C. R. Lim, H. K. Park, D. Gilmer, P. Kirsch, R. Jammy, Y. G. Shin, S. Choi, and C. Chung, "Low power operation bipolar TMO ReRAM for sub-10 nm era," in IEDM Tech. Dig., 2010, pp. 444-447.
13. K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Iizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, and Y. Sugiyama, "Low power and high speed switching of Ti-doped NiO ReRAM under the unipolar voltage source of less than-3 V," in IEDM Tech. Dig., 2007, pp. 767-770.