Uniform complementary resistive switching in tantalum oxide using current sweeps

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 114-116

  Schmelzer, S ^a,b   Linn, E ^a,b   Bottger, U ^a,b   Waser, R ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b JARA Fundamentals of Future Information Technology   (Germany)

Author keywords

Complementary resistive switch (CRS); memory devices; nonvolatile memory; resistive switching

Indexed keywords

COMPLEMENTARY RESISTIVE SWITCH (CRS); FEW-CYCLE; MATERIAL SYSTEMS; NON-VOLATILE MEMORIES; POWER ANALYSIS; RESISTIVE SWITCHING; VOLTAGE COMPLIANCE; VOLTAGE SWEEP;

DATA STORAGE EQUIPMENT; TANTALUM OXIDES;

SWITCHING SYSTEMS;

EID: 84871803750     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2224634     Document Type: Article

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