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Volumn 51, Issue 4 PART 2, 2012, Pages

Improvement of uniformity of resistive switching parameters by selecting the electroformation polarity in IrO 4/TaO 4/WO 4/W structure

(8) Prakash, Amit a Maikap, Siddheswar a Lai, Chao Sung a Lee, Heng Yuan b Chen, W S b Chen, Frederick T b Kao, Ming Jer b Tsai, Ming Jinn b

a CHANG GUNG UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CUMULATIVE PROBABILITIES; DATA RETENTION; ELECTROFORMATIONS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FABRICATED DEVICE; ION MIGRATION; LOW VOLTAGE OPERATION; MEMORY PARAMETERS; RESISTIVE MEMORIES; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SWITCHING CYCLES; SWITCHING MECHANISM;

PHOTOELECTRONS; PROBABILITY DISTRIBUTIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SPECTROSCOPY;

SWITCHING SYSTEMS;

EID: 84860373298 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.04DD06 Document Type: Article

Times cited : (25)

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