Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

Progress in Natural Science: Materials International

Volumn 20, Issue 1, 2010, Pages 1-15

  Pan, Feng ^a   Chen, Chao ^a   Wang, Zhi Shun ^a   Yang, Yu Chao ^a   Yang, Jing ^a   Zeng, Fei ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Filament; Nonvolatile memory; Redox reaction; Resistive switching; RRAM

Indexed keywords

INTERFACE STATES; OXYGEN VACANCIES; RRAM; SWITCHING; ABSTRACTING;

'CURRENT; CONDUCTIVE MECHANISMS; FILAMENT; NON-VOLATILE MEMORY; NONVOLATILE; NONVOLATILE MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; SWITCHING BEHAVIORS; SWITCHING EFFECT;

REDOX REACTIONS;

EID: 84855947146     PISSN: 10020071     EISSN: None     Source Type: Journal    
DOI: 10.1016/s1002-0071(12)60001-x     Document Type: Article

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