Unipolar TaOx-based resistive change memory realized with electrode engineering

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 966-968

  Zhang, Lijie ^a   Huang, Ru ^a   Zhu, Minghao ^a   Qin, Shiqiang ^a   Kuang, Yongbian ^a   Gao, Dejin ^a   Shi, Congyin ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Gibbs free energy; RRAM; TaOx; unipolar

Indexed keywords

COMPARATIVE EXPERIMENTS; ELECTRODE DESIGN; ELECTRODE EFFECTS; FAST SWITCHING; METAL-OXIDE; RESISTIVE SWITCHING; RRAM; STABLE CYCLING; SWITCHING VOLTAGES; TAOX; TOP-ELECTRODE MATERIALS; UNIPOLAR;

FREE ENERGY; GIBBS FREE ENERGY; SWITCHING; SWITCHING SYSTEMS;

ELECTROCHEMICAL ELECTRODES;

EID: 77956174683     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052091     Document Type: Article

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