HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture

ACS Nano

Volumn 7, Issue 3, 2013, Pages 2320-2325

  Yu, Shimeng ^a   Chen, Hong Yu ^a   Gao, Bin ^b   Kang, Jinfeng ^b   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b PEKING UNIVERSITY   (China)

Author keywords

3D integration; bit cost effective; cross point array; HfO2; resistive switching; RRAM

Indexed keywords

3-D INTEGRATION; BIT-COST-EFFECTIVE; CROSS-POINT ARRAY; HFO2; RESISTIVE SWITCHING; RRAM;

ATOMIC LAYER DEPOSITION; COST EFFECTIVENESS; HAFNIUM OXIDES; LITHOGRAPHY; SWITCHING SYSTEMS; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS;

RANDOM ACCESS STORAGE;

EID: 84875674680     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn305510u     Document Type: Article

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