Endurance/retention trade-off on HfO2\metal cap 1T1R bipolar RRAM

IEEE Transactions on Electron Devices

Volumn 60, Issue 3, 2013, Pages 1114-1121

  Chen, Yang Yin ^a,b   Goux, Ludovic ^a   Clima, Sergiu ^a   Govoreanu, Bogdan ^a   Degraeve, Robin ^a   Kar, Gouri Sankar ^a   Fantini, Andrea ^a,b   Groeseneken, Guido ^a,b   Wouters, Dirk J ^a,b   Jurczak, Malgorzata ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Endurance; filament shape; HfO2; quantum point conductance (QPC); resistive switching memory (RRAM); retention; thermodynamics

Indexed keywords

HFO2; I - V CURVE; LONG PULSE; METAL CAP; METAL CAP LAYERS; PERFORMANCE TRADE-OFF; QUANTUM POINT; QUANTUM POINT CONTACT; RELIABILITY PERFORMANCE; RESISTIVE SWITCHING MEMORIES; RETENTION; THERMODYNAMICAL;

CURVE FITTING; DURABILITY; HAFNIUM; HAFNIUM OXIDES; METALS; OXYGEN; POINT CONTACTS; QUANTUM CHEMISTRY; THERMODYNAMICS;

TANTALUM;

EID: 84874656071     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2241064     Document Type: Article

References (15)

1. I.-G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, J. T. Moon, and B. I. Ryu, "Multi-layer crosspoint binary oxide resistive memory (OxRRAM) for post-NAND storage application," in IEDM Tech. Dig., 2005, pp. 750-753. (Pubitemid 46370959)
2. 2 based RRAM," in Proc. IEEE IEDM, 2008, pp. 297-300.
3. J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K. P. Biju, S. Kim, S. Park, and H. Hwang, "Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications," in Proc. IEEE IEDM, 2010, pp. 452-455.
4. B. Govoreanu, G. S. Kar, Y.-Y. Chen, V. Paraschiv, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, G. Pourtois, H. Bender, L. Altimime, D. J.Wouters, J. A. Kittl, and M. Jurczak, "10 nm × 10 nm Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation," in Proc. IEEE IEDM, 2011, pp. 730-732.
5. R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007. (Pubitemid 350064191)
6. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Willams, "Memristive switching mechanism for metal/oxide/metal nanodevices," in Nat. Nanotechnol., Jul. 2008, vol. 3, no. 7, pp. 429-433.
7. Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M.-J. Tsai, "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity," in Proc. IEEE IEDM, 2009, pp. 105-108.
8. 2\Pt cells," Appl. Phy. Lett., vol. 97, no. 24, pp. 243 509-1-243 509-3, Dec. 2010.
9. L. Goux, J. G. Lisoni, M. Jurczak, D. J. Wouters, L. Courtade, and C. Muller, "Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers," J. Appl. Phys, vol. 107, no. 2, pp. 024512-1-024512-7, Jan. 2010.
10. 2 RRAM," in Proc. VLSI Symp. Technol., 2012, pp. 75-76.
11. P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, A. Dal Corso, S. Fabris, G. Fratesi, S. de Gironcoli, R. Gebauer, U. Gerstmann, C. Gougoussis, A. Kokalj, M. Lazzeri, L. Martin-Samos, N. Marzari, F. Mauri, R. Mazzarello, S. Paolini, A. Pasquarello, L. Paulatto, C. Sbraccia, S. Scandolo, G. Sclauzero, A. P. Seitsonen, A. Smogunov, P. Umari, and R.M.Wentzcovitch, "QUANTUM ESPRESSO: A modular and open-source software project for quantum simulations of materials," J. Phys, Condens. Matter, vol. 21, no. 39, p. 395-502, Sep. 2009.
12. 2/Hf 1T1R bipolar RRAM," IEEE Trans. Electron Devices, vol. 59, no. 12, pp. 3243- 3249, Dec. 2012.
13. 2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering," in Proc. VLSI Symp. Technol., 2012, pp. 159-160.
14. S. Clima, Y. Y. Chen, R. Degraeve, M. Mees, K. Sankaran, B. Govoreanu, M. Jurczak, S. De Gendt, and G. Pourtois, "First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism," Appl. Phy. Lett., vol. 100, no. 13, pp. 133 102-1-133 102-4, Mar. 2012.
15. R. Degraeve, P. Roussel, L. Goux, D. Wouters, J. Kittl, L. Altimime, M. Jurczak, and G. Groeseneken, "Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments," in Proc. IEEE IEDM, 2010, pp. 632-635.