SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 22, 2013, Pages

A physical model of switching dynamics in tantalum oxide memristive devices

(8) Mickel, Patrick R a Lohn, Andrew J a Joon Choi, Byung b Joshua Yang, J b Zhang, Min Xian b Marinella, Matthew J a James, Conrad D a Stanley Williams, R b

a SANDIA NATIONAL LABORATORIES (United States)

b HEWLETT PACKARD COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; MODEL PREDICTION; NONLINEAR CONDUCTION; QUANTITATIVE AGREEMENT; QUANTITATIVE MODELS; RESISTIVE SWITCHING; STATE VARIABLES; SWITCHING DYNAMICS;

MEMRISTORS; PASSIVE FILTERS; RESISTORS; SWITCHING SYSTEMS; TANTALUM OXIDES;

EQUATIONS OF STATE;

EID: 84879111010 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4809530 Document Type: Article

Times cited : (75)

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