Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Applied Physics Letters

Volumn 102, Issue 6, 2013, Pages

  Zhuo, V Y Q ^a,b   Jiang, Y ^a   Li, M H ^a   Chua, E K ^a   Zhang, Z ^c   Pan, J S ^c   Zhao, R ^a,d   Shi, L P ^a   Chong, T C ^d   Robertson, J ^b  

^a DATA STORAGE INSTITUTE   (Singapore)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; CONDUCTION MECHANISM; FERMI LEVEL PINNING; HIGH RESOLUTION; HOLE BARRIER; LOW-TO-HIGH; METAL ELECTRODE MATERIALS; METAL WORK FUNCTION; RESISTIVE RANDOM ACCESS MEMORIES (RRAM); RESISTIVE RANDOM ACCESS MEMORY; SCHOTTKY;

ALIGNMENT; ELECTRODES; INTERFACES (MATERIALS); PHOTOELECTRONS; TANTALUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

TANTALUM;

EID: 84874225697     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792274     Document Type: Article

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