Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1133-1135

  Walczyk, D ^a   Walczyk, Ch ^a   Schroeder, T ^a   Bertaud, T ^a   Sowinska M ^a   Lukosius, M ^a   Fraschke, M ^a   Tillack, B ^a,b   Wenger, Ch ^a  

^a IHP   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

1T1R; HfO2; Resistive switching

Indexed keywords

1T1R; CMOS TECHNOLOGY; HFO2; MEMORY CELL; PROCESS DISTRIBUTION; PROCESS VARIATION; PULSE WIDTH; RELIABLE CONTROL; RESISTIVE SWITCHING;

CMOS INTEGRATED CIRCUITS; HAFNIUM OXIDES; RANDOM ACCESS STORAGE;

SWITCHING SYSTEMS;

EID: 79958042911     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.123     Document Type: Conference Paper

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