9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WOx film

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Ho, ChiaHua ^a   Hsu, Cho Lun ^a   Chen, Chun Chi ^a   Liu, Jan Tsai ^a   Wu, Cheng San ^a   Huang, Chien Chao ^a   Hu, Chenming ^b   Yang, Fu Liang ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CHARACTERISTICS; FUNCTIONAL TRANSITIONS; GOOD DATA; ION DYNAMICS; LOW POWER; MEMORY CELL; METAL-OXIDE; NON-VOLATILE MEMORIES; PROGRAMMING CURRENTS; READ OPERATION; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; SMALL DEVICES; SWITCHING MECHANISM; THERMALLY OXIDIZED;

ELECTRON DEVICES; FUNCTIONAL PROGRAMMING; OXYGEN; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 79951825096     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703389     Document Type: Conference Paper

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