Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs

Solid-State Electronics

Volumn 58, Issue 1, 2011, Pages 62-67

  Jousseaume, V ^a   Fantini, A ^a   Nodin, J F ^a   Guedj, C ^a   Persico, A ^a   Buckley, J ^a   Tirano, S ^a,b   Lorenzi, P ^a   Vignon, R ^a   Feldis, H ^a   Minoret, S ^a   Grampeix, H ^a   Roule, A ^a   Favier, S ^a   Martinez, E ^a   Calka, P ^a   Rochat, N ^a   Auvert, G ^a   Barnes, J P ^a   Gonon, P ^a,c   Vallee C ^a,c   Perniola, L ^a   De Salvo, B ^a   more..

^a CEA LETI   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c CNRS   (France)

Author keywords

Forming; Memory; MIM; Ox RRAM

Indexed keywords

ACTIVE MATERIAL; COMPARATIVE STUDIES; COMPOSITION ANALYSIS; DATA RETENTION; ELECTRICAL CHARACTERISTIC; HIGH RESISTANCE; HIGH-RESISTANCE STATE; INTEGRATION SCHEME; LOW-RESISTANCE STATE; MATERIAL SCREENING; MEMORY; MEMORY DEVICE; MIM; NON-POLAR; OX-RRAM; PT ELECTRODE; RESET VOLTAGE; RESISTANCE STATE; SWITCHING CHARACTERISTICS; TEST SETUPS; TUNABILITIES;

HAFNIUM COMPOUNDS; MIM DEVICES; PLATINUM;

RANDOM ACCESS STORAGE;

EID: 79952280756     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.11.023     Document Type: Conference Paper

References (17)

1. Baek IG et al. In: IEDM technical digest; 2004. p. 57-590.
2. Tsunoda K et al. In: IEDM technical digest; 2007. p. 767-70.
3. L. Goux, J.G. Lisoni, M. Jurczak, D.J. Wouters, L. Courtade, and C. Muller J Appl Phys 107 2010 024512
4. Nauenheim C et al. In: Proc of 10th ULIS. 2009. p. 135-38.
5. Sheu, and Shyh-Shyuan VLSI Circ 2009 82 83
6. Y.S. Chen IEDM 2009
7. H.-Y. Lee Jpn J Appl Phys 46 2007 2175 2179
8. Y.-M. Kim, and Jang-Sik Lee J Appl Phys 104 2008 114115
9. Cagli C et al. In: IEDM technical digest; 2008. p. 301-04.
10. Chien WC et al. In: Memory workshop, IMW '09. 2009. p. 1-2.
11. H. Lv Appl Phys Lett 94 2009 213502
12. Wei Z et al. IEDM technical digest; 2008. p. 1-4.
13. I.H. Inoue, S. Yasuda, H. Akinaga, and H. Takagi Phys Rev B 77 3 2008 035105
14. W. Guan, S. Long, Q. Liu, M. Liu, and W. Wang IEEE Electron Dev Lett 29 2008 434
15. Y. Sato IEEE Trans Electron Dev 55 2008 1185
16. S.C. Chae Adv Mater 20 2008 1154 1159
17. U. Russo IEEE Trans Electron Dev 56 2009 186