An ultrathin forming-free HfOx resistance memory with excellent electrical performance

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1473-1475

  Chen, Yu Sheng ^a,b   Lee, Heng Yuan ^a,b   Chen, Pang Shiu ^c   Wu, Tai Yuan ^a   Wang, Ching Chiun ^a   Tzeng, Pei Jer ^a   Chen, Frederick ^a   Tsai, Ming Jinn ^a   Lien, Chenhsin ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Forming free; HfOx; resistance memory; Ti top electrode

Indexed keywords

CHARGED OXYGEN VACANCIES; ELECTRICAL PERFORMANCE; HFOX; HIGH SPEED; INITIAL STATE; MEMORY PERFORMANCE; NEGATIVE VOLTAGE; NON-VOLATILE; ON/OFF RATIO; OPERATION VOLTAGE; OXYGEN IONS; PERCOLATION THRESHOLDS; RESISTANCE MEMORY; RESISTANCE SWITCHING; RESISTIVE MEMORIES; SWEEP DIRECTIONS; SWITCHING MECHANISM; TI CAPPING; TI TOP ELECTRODE; ULTRA-THIN;

OXYGEN; OXYGEN VACANCIES; SOLVENTS;

HAFNIUM COMPOUNDS;

EID: 78649446429     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2081658     Document Type: Article

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