Multibit operation of TiOx-Based ReRAM by schottky barrier height engineering

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 476-478

  Park, Jubong ^a   Biju, K P ^a   Jung, Seungjae ^a   Lee, Wootae ^a   Lee, Joonmyoung ^a   Kim, Seonghyun ^a   Park, Sangsu ^a   Shin, Jungho ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Resistive random access memory (ReRAM); RRAM; Schottky barrier height modulation

Indexed keywords

CONDUCTING PATHS; HIGH CONCENTRATION; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MULTI-BITS; OPERATION VOLTAGE; RESISTIVE RANDOM ACCESS MEMORY; RRAM; SCHOTTKY BARRIER HEIGHT MODULATION; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY-BARRIER-HEIGHT ENGINEERINGS; TIO;

ELECTRIC FIELDS; IRIDIUM; MODULATION; OXYGEN; OXYGEN VACANCIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; TITANIUM NITRIDE;

RANDOM ACCESS STORAGE;

EID: 79953033181     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2109032     Document Type: Article

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