SCOPUS 정보 검색 플랫폼

Volumn 77, Issue , 2012, Pages 35-40

Bipolar resistive switching memory using bilayer TaOx/WO x films

(9) Prakash, A a Maikap, S a Lai, C S a Tien, T C b Chen, W S b Lee, H Y b Chen, F T b Kao, M J b Tsai, M J b

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

Bi layer; Bipolar switching; Filamentary conduction; Iridium oxide (IrOx); Non volatile memory; Resistive memory (RRAM); Tantalum oxide (TaOx); Transition metal oxide (TMO)

Indexed keywords

BI-LAYER; FILAMENTARY CONDUCTION; IRIDIUM OXIDES; NON-VOLATILE MEMORIES; RESISTIVE MEMORIES; TRANSITION-METAL OXIDES;

ELECTRON SPECTROSCOPY; IRIDIUM COMPOUNDS; METALLIC COMPOUNDS; PROBABILITY DISTRIBUTIONS; TANTALUM OXIDES; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

RANDOM ACCESS STORAGE;

EID: 84866038131 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2012.05.028 Document Type: Article

Times cited : (38)

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