Long-endurance nanocrystal TIO2 resistive memory using a TaON buffer layer

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1749-1751

  Cheng, C H ^a   Chen, P C ^a   Wu, Y H ^a   Yeh, F S ^a   Chin, Albert ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

GeO2; Hopping conduction; Resistive random access memory (RRAM); TiO2

Indexed keywords

CURRENT DISTRIBUTION; CYCLING ENDURANCE; GEO2; HOPPING CONDUCTION; NEW APPLICATIONS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; SWITCHING ENERGY; TIO;

BUFFER LAYERS; DURABILITY; FLASH MEMORY; GERMANIUM OXIDES; NANOCRYSTALS; TITANIUM DIOXIDE;

RANDOM ACCESS STORAGE;

EID: 81855206563     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2168939     Document Type: Article

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