Conductive filament scaling of TaOx bipolar ReRAM for improving data retention under low operation current

IEEE Transactions on Electron Devices

Volumn 60, Issue 4, 2013, Pages 1384-1389

  Ninomiya, Takeki ^a   Wei, Zhigiang ^a   Muraoka, Shusaku ^a   Yasuhara, Ryutaro ^a   Katayama, Koji ^a   Takagi, Takeshi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Conductive filament; hopping percolation model; resistive switching RAM; retention

Indexed keywords

CONDUCTIVE FILAMENTS; DATA RETENTION; LOW OPERATION CURRENTS; OXYGEN VACANCY CONCENTRATION; RESISTIVE SWITCHING; RETENTION; RETENTION MODELS; RETENTION PROPERTIES;

ELECTRON DEVICES; ELECTRONICS ENGINEERING;

OXYGEN VACANCIES;

EID: 84875515471     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2248157     Document Type: Article

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