Realization of forming-free ZnO-based resistive switching memory by controlling film thickness

Journal of Physics D: Applied Physics

Volumn 43, Issue 39, 2010, Pages

  Mao, Qinan ^a   Ji, Zhenguo ^a,b   Xi, Junhua ^a,b  

^a ZHEJIANG UNIVERSITY   (China)

^b HANGZHOU DIANZI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FREE CELLS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; UNDERLYING MECHANISM; ZNO; ZNO FILMS;

OXYGEN; OXYGEN VACANCIES; SWITCHING; SWITCHING SYSTEMS;

ZINC OXIDE;

EID: 78249275830     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/39/395104     Document Type: Article

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