Intrinsic resistive switching and memory effects in silicon oxide

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 835-839

  Yao, Jun ^a   Zhong, Lin ^a   Natelson, Douglas ^a,b   Tour, James M ^a,b  

^a Rice University   (United States)

^b RICE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PHENOMENA; ELECTROCHEMICAL REDOX; ELECTRODE MATERIAL; EXPERIMENTAL OBSERVATION; INTRINSIC PROPERTY; MATRIX; MEMORY EFFECTS; MULTI STATE; RESET VOLTAGE; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SET VOLTAGE; SWITCHING MECHANISM;

SILICON COMPOUNDS; SWITCHING; SWITCHING SYSTEMS;

SILICON OXIDES;

EID: 79959370163     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6267-6     Document Type: Article

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