Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Ielmini, D ^a   Nardi, F ^a   Cagli, C ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL DEFECTS; CHEMICAL REDUCTION; DIFFUSION AND OXIDATION; HIGHLY DENSE; INSULATOR METAL TRANSITION; MEMORY ARRAY; METALLIC DOPING; NANOFILAMENTS; NIO FILMS; PHYSICAL MECHANISM; PHYSICAL MODEL; RESISTANCE SWITCHING; RESISTIVE SWITCHING MEMORIES; SET MECHANISM; SWITCHING PHENOMENON; THRESHOLD SWITCHING;

METAL INSULATOR TRANSITION; MODELS; OXIDATION; RANDOM ACCESS STORAGE; SEMICONDUCTOR DOPING; SWITCHING SYSTEMS;

SWITCHING;

EID: 79956107859     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254022     Document Type: Article

References (39)

1. Waser R and Aono M 2007 Nanoionics-based resistive switching memories Nat. Mater. 6 833
2. Seo S et al 2004 Reproducible resistance switching in polycrystalline NiO films Appl. Phys. Lett. 85 5655
3. Lee M-J et al 2007 2-stack ID-IR cross-point structure with oxide diodes as switch elements for high density resistance RAM applications IEDM Tech. Dig. 771
4. 2 based RRAM IEDM Tech. Dig. 297
5. Linn E, Rosezin R, Kügeler C and Waser R 2010 Complementary resistive switches for passive nanocrossbar memories Nat. Mater. 9 403
6. 2 resistive switching memory Nat. Nanotechnol. 5 148
7. Kim Y-M and Lee J-S 2008 Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices J. Appl. Phys. 104 114115
8. Chen A, Haddad S and Wu Y-C 2008 A temperature-accelerated method to evaluate data retention of resistive switching nonvolatile memory IEEE Electron Device Lett. 29 38
9. Strachan J P, Pickett M D, Yang J J, Aloni S, Kilcoyne A L D, Ribeiro G M and Williams R S 2010 Direct identification of the conducting channels in a functioning memristive device Adv. Mater. 22 3573-7
10. Ielmini D, Nardi F, Cagli C and Lacaita A L 2010 Size-dependent retention time in NiO-based resistive switching memories IEEE Electron Device Lett. 31 353
11. x film Appl. Phys. Lett. 91 222103
12. Yoo I K, Kang B S, Ahn S E, Lee C B, Lee M J, Park G-S and Li X-S 2010 Fractal dimension of conducting paths in nickel oxide (NiO) thin films during resistance switching IEEE Trans. Nanotechnol. 9 131
13. Van Landingham K E 1973 Circuit applications of ovonic switching devices IEEE Trans. Electron Devices 20 178
14. Tallarida G, Huby N, Kutrzeba-Kotowska B, Spiga S, Arcari M, Csaba G, Lugli P, Redaelli A and Bez R 2009 Low temperature rectifying junctions for crossbar non-volatile memory devices IEEE Int. Memory Workshop (IMW) pp6-8
15. Nardi F, Ielmini D, Cagli C, Spiga S, Fanciulli M, Goux L and Wouters D J 2010 Sub-10μA reset in NiO-based resistive switching memory (RRAM) cells 2010 IEEE Int. Memory Workshop (IMW) pp66-9
16. Sato Y, Tsunoda K, Kinoshita K, Noshiro H, Aoki M and Sugiyama Y 2008 Sub-100μA reset current of nickel oxide resistive memory through control of filamentary conductance by current limit of mosfet IEEE Trans. Electron Devices 55 1185
17. x brought about by reducing a parasitic capacitance Appl. Phys. Lett. 93 033506
18. Russo U, Ielmini D, Cagli C and Lacaita A L 2009 Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices IEEE Trans. Electron Devices 56 186-92
19. Lee S B et al 2009 Large 1/f noise of unipolar resistance switching and its percolating nature Appl. Phys. Lett. 95 122112
20. Ielmini D, Nardi F and Cagli C 2010 Resistance-dependent amplitude of random telegraph signal noise in resistive switching memories Appl. Phys. Lett. 96 053503
21. Russo U, Ielmini D, Cagli C and Lacaita A L 2009 Self-accelerated thermal dissolution model for reset programming in NiO-based resistive switching memory (RRAM) devices IEEE Trans. Electron Devices 56 193-200
22. Chae S C et al 2008 Random circuit breaker network model for unipolar resistance switching Adv. Mater. 20 1154
23. Lee S B, Chae S C, Chang S H, Lee J S, Seo S, Kahng B and Noh T W 2008 Scaling behaviors of reset voltages and currents in unipolar resistance switching Appl. Phys. Lett. 93 212105
24. Russo U, Kalamanathan D, Ielmini D, Lacaita A L and Kozicki M 2009 Study of multilevel programming in programmable metallization cell (PMC) memory IEEE Trans. Electron Devices 56 1040-7
25. Pop E 2008 The role of electrical and thermal contact resistance for Joule breakdown of single-wall carbon nanotubes Nanotechnology 19 295202
26. Makhlouf S A 2008 Electrical properties of NiO films obtained by high temperature oxidation of nickel Thin Solid Films 516 3112
27. Ielmini D, Nardi F, Cagli C and Lacaita A L 2010 Trade-off between data retention and reset in NiO RRAMs IEEE IRPS pp620-6
28. Cagli C, Nardi F and Ielmini D 2009 Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices IEEE Trans. Electron Devices 56 1712-20
29. Ielmini D and Zhang Y 2007 Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices J. Appl. Phys. 102 054517
30. Lee H D, Köpe B M and Nishi Y 2010 Model of metallic filament formation and rupture in NiO for unipolar switching Phys. Rev. B 81 193202
31. Heiman F P and Miller H S 1965 Temperature dependence of n-type MOS transistor IEEE Trans. Electron Devices 12 142
32. Kanda K, Nose K, Kawaguchi H and Sakurai T 2001 Design impact of positive temperature dependence on drain current in sub-1-V CMOS VLSIs IEEE J. Solid-State Circuits 36 1559
33. Groeseneken G, Colinge J-P, Maes H E, Alderman J C and Holt S 1990 Temperature dependence of threshold voltage in thin film SOI MOSFET's IEEE Electron Device Lett. 11 329
34. Ielmini D, Cagli C and Nardi F 2009 Resistance transition in metal oxides induced by electronic threshold switching Appl. Phys. Lett. 94 063511
35. Ovshinsky S R 1968 Reversible electrical switching phenomena in disordered structures Phys. Rev. Lett 21 1450
36. Chang S H et al 2008 Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors Appl. Phys. Lett. 92 183507
37. Chang S H, Lee J S, Chae S C, Lee S B, Liu C, Kahng B, Kim D-W and Noh T W 2009 Occurrence of both unipolar memory and threshold resistance switching in a NiO film Phys. Rev. Lett. 102 026801
38. Ielmini D 2008 Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses Phys. Rev. B 78 035308
39. Goux L, Lisoni J G, Wang X P, Jurczak M and Wouters D J 2009 Optimized Ni oxidation in 80nm contact holes for integration of forming-free and low-power Ni/NiO/Ni memory cells IEEE Trans. Electron Devices 56 2363