Effect of scaling WOx-Based RRAMs on their resistive switching characteristics

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 671-673

  Kim, Seonghyun ^a   Biju, Kuyyadi P ^a   Jo, Minseok ^a   Jung, Seungjae ^a   Park, Jubong ^a   Lee, Joonmyoung ^a   Lee, Wootae ^a   Shin, Jungho ^a   Park, Sangsu ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Resistive random access memory (RRAM); scaling effect; tungsten oxide

Indexed keywords

FUTURE APPLICATIONS; MEMORY PERFORMANCE; MEMORY WINDOW; MICROSCALE DEVICES; NANOSCALE DEVICE; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; SCALING DOWN; SCALING EFFECTS; SWITCHING CHARACTERISTICS; SWITCHING MECHANISM; SWITCHING PROPERTIES; TUNGSTEN OXIDE; VIA-HOLE;

EQUIPMENT; FLASH MEMORY; NANOSTRUCTURED MATERIALS; OXIDES; PHOTOSENSITIVITY; SWITCHING; TUNGSTEN; TUNGSTEN COMPOUNDS;

RANDOM ACCESS STORAGE;

EID: 79955532474     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2114320     Document Type: Article

References (15)

1. C. Schindler, S. C. P. Thermadam, R. Waser, and M. N. Kozicki, "Bipolar and unipolar resistive switching in Cu-doped SiO2," IEEE Trans. Electron Devices, vol. 54, no. 10, pp. 2762-2768, Oct. 2007. (Pubitemid 47541876)
2. H. Sim, H. Choi, D. Lee, M. Chang, D. Choi, Y. Son, E.-H. Lee, W. Kin, Y. Park, I.-K. Yoo, and H. Hwang, "Excellent resistance switching characteristics of Pt/SrTiO3 Schottky junction for multi-bit nonvolatile memory application," in IEDM Tech. Dig., 2005, pp. 777-780.
3. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-Nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, no. 25/26, pp. 2632-2663, Jul. 2009.
4. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, and B. H. Park, "Reproducible resistance switching in polycrystalline NiO films," Appl. Phys. Lett., vol. 85, no. 23, pp. 5655-5657, Dec. 2004. (Pubitemid 40162553)
5. W. C. Chien, Y. C. Chen, E. K. Lai, Y. D. Yao, P. Lin, S. F. Horng, J. Gong, T. H. Chou, H. M. Lin, M. N. Chang, Y. H. Shih, K. Y. Hsieh, R. Liu, and C. Y. Lu, "Unipolar switching behaviors of RTO WOx RRAM," IEEE Electron Device Lett., vol. 31, no. 2, pp. 126-128, Feb. 2010.
6. C. H. Ho, E. K. Lai, M. D. Lee, C. L. Pan, Y. D. Yao, K. Y. Hsieh, R. Liu, and C. Y. Lu, "A highly reliable self-aligned graded oxideWOx resistance memory: Conduction mechanisms and reliability," in VLSI Symp. Tech. Dig., 2007, pp. 228-229.
7. D. S. Shang, L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, R. W. Li, and Y. G. Zhao, "Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing," Appl. Phys. Lett., vol. 96, no. 7, p. 072103, Feb. 2010.
8. S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D.-W. Kim, C. U. Jung, S. Seo, M.-J. Lee, and T. W. Noh, "Random circuit breaker network model for unipolar resistance switching," Adv. Mater., vol. 20, no. 6, pp. 1154-1159, Mar. 2008.
9. J. Yoon, H. Choi, D. Lee, J.-B. Park, J. Lee, D.-J. Seong, Y. Ju, M. Chang, S. Jung, and H. Hwang, "Excellent switching uniformity of Cudoped MoOx/GdOx bilayer for nonvolatile memory applications," IEEE Electron Device Lett., vol. 30, no. 5, pp. 457-459, May 2009.
10. B. Gao, H. W. Zhang, S. Yu, B. Sun, L. F. Liu, X. Y. Liu, Y. Wang, R. Q. Han, J. F. Kang, B. Yu, and Y. Y. Wang, "Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology," in VLSI Symp. Tech. Dig., 2009, pp. 30-31.
11. I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U-I. Chung, J. T. Moon, and B. I. Ryu, "Multi-layer cross-point binary Oxide Resistive Memory (OxRRAM) for post-NAND storage application," in IEDM Tech. Dig., 2005, pp. 750-753. (Pubitemid 46370959)
12. I. K. Yoo, B. S. Kang, Y. D. Park, M. J. Lee, and Y. Park, "Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films," Appl. Phys. Lett., vol. 92, no. 20, p. 202112, May 2008.
13. S. W. Nam, M. J. Rooks, K. B. Kim, and S. M. Rossnagel, "Ionic field effect transistors with sub-10 nm multiple nanopores," Nano Lett., vol. 9, no. 5, pp. 2044-2048, May 2009.
14. A. Sawa, "Resistive switching in transition metal oxides," Mater. Today, vol. 11, no. 6, pp. 28-36, Jun. 2008. (Pubitemid 351680723)
15. D. S. Lee, J.-M. Lee, M. S. Jo, J. B. Park, M. Siddik, I. S. Kim, K. A. Seo, J. H. Shin, K. P. Biju, and H. Hwang, "Noise analysis based model of unstable parameters and solution for achieving improved characteristics in resistance random access memory," presented at the IEEE SISC, San Diego, CA, 2010.