Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Rahaman, Sheikh Ziaur ^a   Maikap, Siddheswar ^a   Tien, Ta Chang ^b   Lee, Heng Yuan ^b   Chen, Wei Su ^b   Chen, Frederick T ^b   Kao, Ming Jer ^b   Tsai, Ming Jinn ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Charge trapping; Nanofilament; Nanoscale; Resistive memory; Ti nanolayer

Indexed keywords

CAPACITANCE; CHARGE TRAPPING; COPPER; ENERGY DISPERSIVE SPECTROSCOPY; HEAVY IONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOTECHNOLOGY; PHOTOELECTRON SPECTROSCOPY; SWITCHING; TITANIUM;

CAPACITANCE-VOLTAGE HYSTERESIS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; LOW VOLTAGE OPERATION; NANO LAYERS; NANO SCALE; NANOFILAMENT; RESISTIVE MEMORY; RESISTIVE SWITCHING MEMORY;

COPPER COMPOUNDS;

EID: 84864000793     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-345     Document Type: Article

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