Non-volatile memory based on solid electrolytes

Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004

Volumn , Issue , 2004, Pages 10-17

  Kozicki, Michael N ^a   Gopalan, Chakravarthy ^a   Balakrishnan, Murali ^a   Park, Mira ^a   Mitkova, Maria ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Electrodeposition; Non volatile memory; Resistance change; Solid electrolyte

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTRODEPOSITION; METALLIZING; POLYMERS; SOLID ELECTROLYTES;

ELECTROLYTE FILMS; PROGRAMMABLE METALLIZATION CELL (PMC); RESISTANCE CHANGE; STORAGE CELLS;

NONVOLATILE STORAGE;

EID: 18844382348     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. M.N. Kozicki, M. Park, and M. Mitkova, "Nanoscale memory elements based on solid state electrolytes," IEEE Trans. Nanotechnology, in press.
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4. 3 films," Thin Solid Films, vol. 426, 281-287 (2003).
5. M.N. Kozicki, M. Mitkova, J. Zhu, and M. Park, "Nanoscale phase separation in Ag-Ge-Se glasses," Microelectronic Engineering, vol. 63, 155-159 (2002).
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7. M. Mitkova, M.N. Kozicki, H.C. Kim, and T.L. Alford, "Thermal and Photodiffusion of Ag in S-Rich Ge-S amorphous films," Thin Solid Films, vol. 449, 248-253 (2004).
8. 3 grown on tungsten," unpublished.
9. T. Kawaguchi, S. Maruno, and S.R. Elliott, "Optical, electrical, and structural properties of amorphous Ag-Ge-S and Ag-Ge-Se films and comparison of photoinduced and thermally induced phenomena of both systems," J. Appl. Phys., vol. 79, 9096-9104 (1996).