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Volumn 99, Issue 22, 2011, Pages

Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure

Author keywords

[No Author keywords available]

Indexed keywords

BIAS OPERATION; BONDING STATE; CU DIFFUSION; DEVICE OPERATIONS; FORMING PROCESS; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; INTENSITY RATIO; METAL FILAMENTS; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY;

EID: 82955213606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3664781     Document Type: Article
Times cited : (63)

References (27)
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    • Robertson, J.1
  • 16
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    • S. Doniach and M. unji, J. Phys. C 3, 285 (1970). 10.1088/0022-3719/3/2/ 010
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    • Doniach, S.1    Unji, M.2
  • 17
    • 33744538097 scopus 로고
    • 10.1103/PhysRevB.5.4709
    • D. A. Shirley, Phys. Rev. B 5, 4709 (1972). 10.1103/PhysRevB.5.4709
    • (1972) Phys. Rev. B , vol.5 , pp. 4709
    • Shirley, D.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.