Low power and high speed bipolar switching with a thin reactive ti buffer layer in robust HfO2 based RRAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Lee, H Y ^a,c   Chen, P S ^b   Wu, T Y ^a   Chen, Y S ^a   Wang, C C ^a   Tzeng, P J ^a   Lin, C H ^a   Chen, F ^a   Lien, C H ^c   Tsai, M J ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGIES; DATA RETENTIONS; FAST SWITCHING; FULLY INTEGRATED; HIGH TEMPERATURES; HIGH YIELDS; HIGH-SPEED; LOW-POWER; MEMORY CELLS; MEMORY DEVICES; MEMORY PERFORMANCE; MULTI LEVELS; NON-VOLATILE MEMORIES; OPERATION CURRENTS; RESISTANCE RATIOS; TIN ELECTRODES;

APPROXIMATION THEORY; BUFFER LAYERS; CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES; HAFNIUM COMPOUNDS; TIN; TITANIUM; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

DATA STORAGE EQUIPMENT;

EID: 64549149261     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796677     Document Type: Conference Paper

References (7)

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