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Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

Influence of the SET current on the resistive switching properties of tantalum oxide created by oxygen implantation

(4) Bishop, S M a Bakhru, H a Capulong, J O a Cady, N C a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT LIMITS; MEMORY WINDOW; ON-STATE RESISTANCE; OXYGEN IMPLANTATION; PEAK POWER; RESET CURRENTS; RESISTIVE MEMORIES; RESISTIVE SWITCHING; SWITCHING PROPERTIES;

DURABILITY; TANTALUM; TANTALUM OXIDES;

OXYGEN;

EID: 84859805948 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3701154 Document Type: Article

Times cited : (12)

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