SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 24, Issue 14, 2012, Pages 1844-1849

Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM

(9) Liu, Qi a Sun, Jun b Lv, Hangbing a Long, Shibing a Yin, Kuibo b Wan, Neng b Li, Yingtao a Sun, Litao b Liu, Ming a

a INSTITUTE OF MICROELECTRONICS (China)

b Southeast University (China)

Author keywords

conductive filament; in situ TEM; nonvolatile memory; resistive switching; solid electrolyte insulator

Indexed keywords

CONDUCTIVE FILAMENTS; IN SITU TEM; NONVOLATILE MEMORY; RESISTIVE SWITCHING; SOLID-ELECTROLYTE INSULATOR;

ELECTRON EMISSION; IN SITU PROCESSING; PLATINUM; REDOX REACTIONS; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROLYTES;

COPPER; ELECTROLYTE; OXIDE; PLATINUM; SILVER;

ARTICLE; CHEMISTRY; ELECTRODE; SEMICONDUCTOR;

COPPER; ELECTRODES; ELECTROLYTES; OXIDES; PLATINUM; SEMICONDUCTORS; SILVER;

EID: 84859582233 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201104104 Document Type: Article

Times cited : (553)

References (33)

1
- 41149099157
- G. I. Meijer, Science 2008, 319, 1625.
- (2008) Science , vol.319 , pp. 1625
- Meijer, G.I.¹

2
- 35748974883
- R. Waser, M. Aono, Nat. Mater. 2007, 6, 833.
- (2007) Nat. Mater. , vol.6 , pp. 833
- Waser, R.¹ Aono, M.²

3
- 43549126477
- A. Sawa, Mater. Today 2008, 11, 28.
- (2008) Mater. Today , vol.11 , pp. 28
- Sawa, A.¹

4
- 79960642086
- M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, K. Kim, Nat. Mater. 2011, 10, 625.
- (2011) Nat. Mater. , vol.10 , pp. 625
- Lee, M.-J.¹ Lee, C.B.² Lee, D.³ Lee, S.R.⁴ Chang, M.⁵ Hur, J.H.⁶ Kim, Y.-B.⁷ Kim, C.-J.⁸ Seo, D.H.⁹ Seo, S.¹⁰ Chung, U.-I.¹¹ Yoo, I.-K.¹² Kim, K.¹³

5
- 46749093701
- J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, R. S. Williams, Nat. Nanotechnol. 2008, 3, 429.
- (2008) Nat. Nanotechnol. , vol.3 , pp. 429
- Yang, J.J.¹ Pickett, M.D.² Li, X.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

6
- 79751505903
- H. Schroeder, R. Pandian, J. Miao, Phys. Status Solidi A 2011, 208, 300.
- (2011) Phys. Status Solidi A , vol.208 , pp. 300
- Schroeder, H.¹ Pandian, R.² Miao, J.³

7
- 79955919620
- K. Nagashima, T. Yanagida, K. Oka, M. Kanai, A. Klamchuen, J.-S. Kim, B. H. Park, T. Kawai, Nano Lett. 2011, 11, 2114.
- (2011) Nano Lett. , vol.11 , pp. 2114
- Nagashima, K.¹ Yanagida, T.² Oka, K.³ Kanai, M.⁴ Klamchuen, A.⁵ Kim, J.-S.⁶ Park, B.H.⁷ Kawai, T.⁸

8
- 33947624246
- S. Dietrich, M. Angerbauer, M. Ivanov, D. Gogl, H. Hoenigschmid, M. Kund, C. Liaw, M. Markert, R. Symanczyk, L. Altimime, S. Bournat, G. Mueller, IEEE J. Solid-State Circuits 2007, 42, 839.
- (2007) IEEE J. Solid-State Circuits , vol.42 , pp. 839
- Dietrich, S.¹ Angerbauer, M.² Ivanov, M.³ Gogl, D.⁴ Hoenigschmid, H.⁵ Kund, M.⁶ Liaw, C.⁷ Markert, M.⁸ Symanczyk, R.⁹ Altimime, L.¹⁰ Bournat, S.¹¹ Mueller, G.¹²

9
- 77951622926
- E. Linn, R. Rosezin, C. Kügeler, R. Waser, Nat. Mater. 2010, 9, 403.
- (2010) Nat. Mater. , vol.9 , pp. 403
- Linn, E.¹ Rosezin, R.² Kügeler, C.³ Waser, R.⁴

10
- 67349281548
- U. Russo, D. Kamalanathan, D. Ielmini, A. L. Lacaita, M. N. Koziciki, IEEE Trans. Electron Device 2009, 56, 1040.
- (2009) IEEE Trans. Electron Device , vol.56 , pp. 1040
- Russo, U.¹ Kamalanathan, D.² Ielmini, D.³ Lacaita, A.L.⁴ Koziciki, M.N.⁵

11
- 78649934902
- M. Aono, T. Hasegawa, Proc. IEEE 2010, 98, 2228.
- (2010) Proc. IEEE , vol.98 , pp. 2228
- Aono, M.¹ Hasegawa, T.²

12
- 67650102619
- R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 2009, 21, 2632.
- (2009) Adv. Mater. , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

13
- 43549104017
- W. Guan, S. Long, Q. Liu, M. Liu, W. Wang, IEEE Electron Device Lett. 2008, 29, 434.
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 434
- Guan, W.¹ Long, S.² Liu, Q.³ Liu, M.⁴ Wang, W.⁵

14
- 79957846221
- F. Zhuge, S. Peng, C. He, X. Zhu, X. Chen, Y. Liu, R.-W. Li, Nanotechnol. 2011, 22, 275204.
- (2011) Nanotechnol. , vol.22 , pp. 275204
- Zhuge, F.¹ Peng, S.² He, C.³ Zhu, X.⁴ Chen, X.⁵ Liu, Y.⁶ Li, R.-W.⁷

15
- 40449092679
- S. H. Jo, W. Lu, Nano Lett. 2008, 8, 392.
- (2008) Nano Lett. , vol.8 , pp. 392
- Jo, S.H.¹ Lu, W.²

16
- 61649104641
- S. H. Jo, K.-H. Kim, W. Lu, Nano Lett. 2009, 9, 496.
- (2009) Nano Lett. , vol.9 , pp. 496
- Jo, S.H.¹ Kim, K.-H.² Lu, W.³

17
- 55149086159
- K. Fujiwara, T. Nemoto, M. J. Rozenberg, Y. Nakamura, H. Takagi, Jpn. J. Appl. Phys. 2008, 47, 6266.
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 6266
- Fujiwara, K.¹ Nemoto, T.² Rozenberg, M.J.³ Nakamura, Y.⁴ Takagi, H.⁵

18
- 34848899459
- X. Guo, C. Schindler, S. Menzel, R. Waser, Appl. Phys. Lett. 2007, 91, 133513.
- (2007) Appl. Phys. Lett. , vol.91 , pp. 133513
- Guo, X.¹ Schindler, C.² Menzel, S.³ Waser, R.⁴

19
- 77957323466
- C.-P. Hsiung, H.-W. Liao, J.-Y. Gan, T.-B. Wu, J.-C. Hwang, F. Chen, M.-J. Tsai, ACS Nano 2010, 4, 5414.
- (2010) ACS Nano , vol.4 , pp. 5414
- Hsiung, C.-P.¹ Liao, H.-W.² Gan, J.-Y.³ Wu, T.-B.⁴ Hwang, J.-C.⁵ Chen, F.⁶ Tsai, M.-J.⁷

20
- 46849113019
- M. N. Kozicki, C. Ratnakumar, M. Mitkova, Proc. Non-Volatile Memory Technol. Symp. 2006, 111.
- (2006) Proc. Non-Volatile Memory Technol. Symp. , pp. 111
- Kozicki, M.N.¹ Ratnakumar, C.² Mitkova, M.³

21
- 76649133422
- D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, C. S. Hwang, Nat. Nanotechnol. 2010, 5, 148.
- (2010) Nat. Nanotechnol. , vol.5 , pp. 148
- Kwon, D.-H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.⁵ Kim, G.H.⁶ Li, X.-S.⁷ Park, G.-S.⁸ Lee, B.⁹ Han, S.¹⁰ Kim, M.¹¹ Hwang, C.S.¹²

22
- 79956124770
- K. M. Kim, S. J. Song, G. H. Kim, J. Y. Seok, M. H. Lee, J. H. Yoon, J. Park, C. S. Hwang, Adv. Funct. Mater. 2011, 21, 1587.
- (2011) Adv. Funct. Mater. , vol.21 , pp. 1587
- Kim, K.M.¹ Song, S.J.² Kim, G.H.³ Seok, J.Y.⁴ Lee, M.H.⁵ Yoon, J.H.⁶ Park, J.⁷ Hwang, C.S.⁸

23
- 77955732575
- J. P. Strachan, M. D. Pickett, J. J. Yang, S. Aloni, A. L. D. Kilcoyne, G. M. Ribeiro, R. S. Williams, Adv. Mater. 2010, 22, 3573.
- (2010) Adv. Mater. , vol.22 , pp. 3573
- Strachan, J.P.¹ Pickett, M.D.² Yang, J.J.³ Aloni, S.⁴ Kilcoyne, A.L.D.⁵ Ribeiro, G.M.⁶ Williams, R.S.⁷

24
- 65249125383
- Y. C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Nano lett. 2009, 9, 1636.
- (2009) Nano Lett. , vol.9 , pp. 1636
- Yang, Y.C.¹ Pan, F.² Liu, Q.³ Liu, M.⁴ Zeng, F.⁵

25
- 78049340534
- Q. Liu, S. Long, H. Lv, W. Wang, J. Niu, Z. Huo, J. Chen, M. Liu, ACS Nano 2010, 4, 6162.
- (2010) ACS Nano , vol.4 , pp. 6162
- Liu, Q.¹ Long, S.² Lv, H.³ Wang, W.⁴ Niu, J.⁵ Huo, Z.⁶ Chen, J.⁷ Liu, M.⁸

26
- 84859601097
- L. Chen, Z. Liu, Y. Xia, K. Yin, L. Gao, J. Yin, Appl. Phys. Lett. 2009, 94, 053106.
- (2009) Appl. Phys. Lett. , vol.94 , pp. 053106
- Chen, L.¹ Liu, Z.² Xia, Y.³ Yin, K.⁴ Gao, L.⁵ Yin, J.⁶

27
- 77952942487
- Z. Xu, Y. Bando, W. Wang, X. Bai, G. Dmitri, ACS Nano 2010, 4, 2515.
- (2010) ACS Nano , vol.4 , pp. 2515
- Xu, Z.¹ Bando, Y.² Wang, W.³ Bai, X.⁴ Dmitri, G.⁵

28
- 79959466855
- T. Fujii, M. Arita, Y. Takahashi, I. Fujiwara, Appl. Phys. Lett. 2011, 98, 212104.
- (2011) Appl. Phys. Lett. , vol.98 , pp. 212104
- Fujii, T.¹ Arita, M.² Takahashi, Y.³ Fujiwara, I.⁴

29
- 79960900595
- S.-J. Choi, G.-S. Park, K.-H. Kim, S. Cho, W.-Y. Yang, X.-S. Li, J.-H. Moon, K.-J. Lee, K. Kim, Adv. Mater. 2011, 23, 3272.
- (2011) Adv. Mater. , vol.23 , pp. 3272
- Choi, S.-J.¹ Park, G.-S.² Kim, K.-H.³ Cho, S.⁴ Yang, W.-Y.⁵ Li, X.-S.⁶ Moon, J.-H.⁷ Lee, K.-J.⁸ Kim, K.⁹

30
- 80054813115
- B. Cho, J.-M. Yun, S. Song, Y. Ji, D.-Y. Kim, T. Lee, Adv. Funct. Mater. 2011, 21, 3976.
- (2011) Adv. Funct. Mater. , vol.21 , pp. 3976
- Cho, B.¹ Yun, J.-M.² Song, S.³ Ji, Y.⁴ Kim, D.-Y.⁵ Lee, T.⁶

31
- 56549119052
- N. Banno, T. Sakamoto, N. Iguchi, H. Sunamura, K. Terabe, T. Hasegawa, M. Aono, IEEE Trans. Electron Device 2008, 55, 3283.
- (2008) IEEE Trans. Electron Device , vol.55 , pp. 3283
- Banno, N.¹ Sakamoto, T.² Iguchi, N.³ Sunamura, H.⁴ Terabe, K.⁵ Hasegawa, T.⁶ Aono, M.⁷

32
- 79960906294
- W. Lian, H. Lv, Q. Liu, S. Long, W. Wang, Y. Wang, Y. Li, S. Zhang, Y. Dai, J. Chen, M. Liu, IEEE Electron Device Lett. 2011, 32, 1053.
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 1053
- Lian, W.¹ Lv, H.² Liu, Q.³ Long, S.⁴ Wang, W.⁵ Wang, Y.⁶ Li, Y.⁷ Zhang, S.⁸ Dai, Y.⁹ Chen, J.¹⁰ Liu, M.¹¹

33
- 75749086328
- Y. Li, S. Long, M. Zhang, Q. Liu, L. Shao, S. Zhang, Y. Wang, Q. Zuo, M. Liu, IEEE Electron Device Lett. 2010, 31, 117.
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 117
- Li, Y.¹ Long, S.² Zhang, M.³ Liu, Q.⁴ Shao, L.⁵ Zhang, S.⁶ Wang, Y.⁷ Zuo, Q.⁸ Liu, M.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.