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Advanced Materials

Volumn 24, Issue 14, 2012, Pages 1844-1849

Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM

(9) Liu, Qi a Sun, Jun b Lv, Hangbing a Long, Shibing a Yin, Kuibo b Wan, Neng b Li, Yingtao a Sun, Litao b Liu, Ming a

a INSTITUTE OF MICROELECTRONICS (China)

b Southeast University (China)

Author keywords

conductive filament; in situ TEM; nonvolatile memory; resistive switching; solid electrolyte insulator

Indexed keywords

CONDUCTIVE FILAMENTS; IN SITU TEM; NONVOLATILE MEMORY; RESISTIVE SWITCHING; SOLID-ELECTROLYTE INSULATOR;

ELECTRON EMISSION; IN SITU PROCESSING; PLATINUM; REDOX REACTIONS; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTROLYTES;

COPPER; ELECTROLYTE; OXIDE; PLATINUM; SILVER;

ARTICLE; CHEMISTRY; ELECTRODE; SEMICONDUCTOR;

COPPER; ELECTRODES; ELECTROLYTES; OXIDES; PLATINUM; SEMICONDUCTORS; SILVER;

EID: 84859582233 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201104104 Document Type: Article

Times cited : (557)

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