Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode

ACS Nano

Volumn 4, Issue 10, 2010, Pages 6162-6168

  Liu, Qi ^a,b   Long, Shibing ^a   Lv, Hangbing ^a   Wang, Wei ^a,c   Niu, Jiebin ^a   Huo, Zongliang ^a   Chen, Junning ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b ANHUI UNIVERSITY   (China)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

conductive filament; metal nanocrystal; nonvolatile memory; resistive switching; solid electrolyte; ZrO2

Indexed keywords

CONDUCTIVE FILAMENTS; METAL NANOCRYSTAL; NON-VOLATILE MEMORIES; RESISTIVE SWITCHING; ZRO2;

ANALOG CIRCUITS; ATOMIC SPECTROSCOPY; ELECTRIC FIELDS; ELECTROCHEMICAL ELECTRODES; ENERGY DISPERSIVE SPECTROSCOPY; FILAMENTS (LAMP); NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NUCLEATION; PLATINUM; SILVER; SOLID ELECTROLYTES; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

METALS;

ELECTROLYTE; METAL NANOPARTICLE; PLATINUM; SILVER; ZIRCONIUM; ZIRCONIUM OXIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRODE; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY;

ELECTRIC CONDUCTIVITY; ELECTRODES; ELECTROLYTES; METAL NANOPARTICLES; MICROSCOPY, ELECTRON, TRANSMISSION; NANOTECHNOLOGY; PLATINUM; SEMICONDUCTORS; SILVER; TEMPERATURE; X-RAYS; ZIRCONIUM;

EID: 78049340534     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1017582     Document Type: Article

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