Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

Applied Physics Letters

Volumn 97, Issue 17, 2010, Pages

  Lee, Joonmyoung ^a   Bourim, El Mostafa ^a   Lee, Wootae ^a   Park, Jubong ^a   Jo, Minseok ^a   Jung, Seungjae ^a   Shin, Jungho ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER STRUCTURE; BINARY OXIDES; CONDUCTING FILAMENT; GOOD DATA; NON-VOLATILE MEMORY APPLICATION; OPERATING VOLTAGE; RESET CURRENTS; RESISTIVE SWITCHING MECHANISMS; SWITCHING PARAMETERS;

MONOLAYERS; REDOX REACTIONS; SWITCHING; ZIRCONIUM ALLOYS;

HAFNIUM COMPOUNDS;

EID: 78149457942     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3491803     Document Type: Article

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