Low-power TiN/Al2O3/Pt resistive switching device with sub-20 A switching current and gradual resistance modulation

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Wu, Yi ^a   Yu, Shimeng ^a   Lee, Byoungil ^a   Wong, Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; DRAIN TERMINALS; ENDURANCE TEST; GATE BIAS; INPUT VOLTAGES; LOW POWER; MEMORY STACK; MULTI-LEVEL; QUALITATIVE MODEL; RANDOM ACCESS MEMORIES; RESET CURRENTS; RESISTANCE MODULATION; RESISTANCE STATE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SERIES TRANSISTORS; SWITCHING CHARACTERISTICS; SWITCHING CURRENTS; SWITCHING TIME;

DC POWER TRANSMISSION; PLATINUM; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS; TITANIUM NITRIDE;

SWITCHING;

EID: 81355132314     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3657938     Document Type: Article

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