Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages

  Prakash, Amit ^a   Maikap, Siddheswar ^a   Rahaman, Sheikh Ziaur ^a   Majumdar, Sandip ^b   Manna, Santanu ^b   Ray, Samit K ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Ge GeOx; Memory; Nanofilament; Nanowire; Oxygen ion migration; RRAM

Indexed keywords

DATA STORAGE EQUIPMENT; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IONS; IRIDIUM COMPOUNDS; NANOWIRES; OXYGEN VACANCIES; PHOTOLUMINESCENCE; RANDOM ACCESS STORAGE; RRAM; SCANNING ELECTRON MICROSCOPY; SWITCHING; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW OPERATING VOLTAGE; NANOFILAMENT; OXYGEN ION MIGRATIONS; PHOTOLUMINESCENCE SPECTRUM; REAL TIME OBSERVATION; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORY; VAPOR-LIQUID-SOLID TECHNIQUES;

GERMANIUM COMPOUNDS;

EID: 85002593032     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-220     Document Type: Article

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