Conductive bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20nm

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 754-757

  Kund, Michael ^a   Beitel, Gerhard ^a   Pinnow, Cay Uwe ^a   Röhr, Thomas ^a   Schumann, Jörg ^a   Symanczyk, Ralf ^a   Ufert, Klaus Dieter ^a   Müller, Gerhard ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CONDUCTIVE MATERIALS; DURABILITY; OXIDATION; RELIABILITY;

MEMORY CELLS; MULTI-LEVEL-CAPABILITY (MLC); NON-VOLATILE MEMORY; OPERATING TEMPERATURE; THIN SOLID STATE ELECTROLYTE LAYER;

RANDOM ACCESS STORAGE;

EID: 33847759058     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2005.1609463     Document Type: Conference Paper

References (3)

1. Gerhard Müller, Thomas Happ, Michael Kund, Gill Yong Lee, Nicolas Nagel, and Recai Sezi, «Status and Outlook of Emerging Nonvolatile Memory Technologies», IEDM, Tech. Dig., 2004, p. 567
2. Ralf Symanczyk, Murali Balakrishnan, Chakravarthy Gopalan, Thomas Happ, Michael Kozicki, Michael Kund, Thomas Mikolajick, Maria Mitkova, Mira Park, Cay-Uwe Pinnow, John Robertson, Klaus-Dieter Ufert, «Electrical Characterization of Solid State Ionic Memory Elements », NVMTS Tech. Dig., 2003, p. 17-1
3. Michael N. Kozicki, Chakravarthy Gopalan, Murali Balakrishnan, Mira Park and Maria Mitkova, «Non-Volatile Memory Based on Solid Electrolytes», Proceedings of the 2004 Non-Volatile Memory Technology Symposium, 10-17 (2004) and Michael N. Kozicki, Mira Park, and Maria Mitkova, "Nanoscale Memory Elements Based on Solid-State Electrolytes," IEEE Trans. Nanotechnology, vol. 4, no. 3, 331-338 (2005)