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Volumn 307, Issue , 2013, Pages 98-101
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Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)
a
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Author keywords
Ion implantation; Non volatile memory; Resistive switching; Tantalum oxide
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Indexed keywords
DATA STORAGE EQUIPMENT;
DIGITAL STORAGE;
FILM GROWTH;
HAFNIUM OXIDES;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
ION IMPLANTATION;
NONVOLATILE STORAGE;
OXYGEN VACANCIES;
RANDOM ACCESS STORAGE;
RRAM;
SWITCHING SYSTEMS;
TANTALUM OXIDES;
TRANSITION METAL COMPOUNDS;
TRANSITION METALS;
TRANSMISSION ELECTRON MICROSCOPY;
FILM DEPOSITION TECHNIQUES;
NON-VOLATILE MEMORY;
OXYGEN IMPLANTATION;
PHYSICAL STRUCTURES;
RESISTIVE RANDOM ACCESS MEMORY (RERAM);
RESISTIVE SWITCHING;
SUBSTOICHIOMETRIC OXIDE;
TRANSITION-METAL OXIDES;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 84885189704
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nimb.2012.11.094 Document Type: Article |
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Times cited : (9)
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References (14)
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