Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

  Goux, L ^a   Opsomer, K ^a   Degraeve, R ^a   Mller, R ^a   Detavernier, C ^b   Wouters, D J ^a   Jurczak, M ^a   Altimime, L ^a   Kittl, J A ^a  

^a IMEC   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL AFFINITIES; FORMING PROPERTIES; LAYER COMPOSITION; MEMORY PROPERTIES; RESISTIVE SWITCHING; STATE STABILITY;

CHEMICAL STABILITY;

SWITCHING SYSTEMS;

EID: 80051596276     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3621835     Document Type: Article

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