Resistive-switching characteristics of Al/Pr0.7 Ca0.3MnO3 for nonvolatile memory applications

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 919-921

  Seong, Dong Jun ^a   Hassan, Musarrat ^a   Choi, Hyejung ^a   Lee, Joo ^a   Yoon, Jaesik ^a   Park, Ju Bong ^a   Lee, Wootae ^a   Oh, Min Suk ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Al Pr0.7Ca0.3MnO3 (PCMO); Interface switching; Resistance random access memory (ReRAM); Uniformity

Indexed keywords

AL/PR0.7CA0.3MNO3 (PCMO); ALUMINUM OXIDES; CONVENTIONAL SPUTTERING; DATA RETENTION; INTERFACE SWITCHING; NON-VOLATILE MEMORY APPLICATION; POLYCRYSTALLINE; RESISTANCE RANDOM-ACCESS MEMORY (RERAM); RESISTIVE SWITCHING; SWITCHING CHARACTERISTICS; SWITCHING MECHANISM; SYSTEMATIC STUDY; TRANSMISSION ELECTRON; UNIFORMITY;

ALUMINA; CALCIUM; DISSOLUTION; MANGANESE COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SWITCHING;

EID: 69949147977     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2025896     Document Type: Article

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