Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high- Ge-content Ge0.5Se0.5 solid electrolyte

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Rahaman, Sheikh Ziaur ^a   Maikap, Siddheswar ^a   Das, Atanu ^a   Prakash, Amit ^a   Wu, Ya Hsuan ^a   Lai, Chao Sung ^a   Tien, Ta Chang ^b   Chen, Wei Su ^b   Lee, Heng Yuan ^b   Chen, Frederick T ^b   Tsai, Ming Jinn ^b   Chang, Liann Be ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

High Ge; Memory; Nanoscale; Resistive switches; Solid electrolyte

Indexed keywords

COPPER; DATA STORAGE EQUIPMENT; ENERGY DISPERSIVE SPECTROSCOPY; NANOSTRUCTURES; POTENTIOMETRIC SENSORS; SELENIUM COMPOUNDS; SOLID ELECTROLYTES; SWITCHING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTROLYTE COMPOSITIONS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; ENERGY-BAND DIAGRAM; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; NANO SCALE; RESISTIVE SWITCHES; RESISTIVE SWITCHING MEMORY; SWITCHING MECHANISM;

GERMANIUM COMPOUNDS;

EID: 84871023977     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-614     Document Type: Article

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