Excellent switching uniformity of Cu-doped MoOxGdOx bilayer for nonvolatile memory applications

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 457-459

  Yoon, Jaesik ^a   Choi, Hyejung ^a   Lee, Dongsoo ^a   Park, Ju Bong ^a   Lee, Joonmyoung ^a   Seong, Dong Ju ^a   Ju, Yongkyu ^a   Chang, Man ^a   Jung, Seungjae ^a   Hwang, Hyunsan ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Bilayer; GdOx; Nonvolatile memory (NVM); Resistance random access memory (ReRAM)

Indexed keywords

BI-LAYER FILMS; BILAYER; DATA RETENTION; DEVICE CHARACTERISTICS; GDOX; NANO SCALE; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE MEMORY (NVM); RESET VOLTAGE; RESISTANCE RANDOM ACCESS MEMORY (RERAM); RESISTANCE RATIO; THREE ORDERS OF MAGNITUDE; TWO-STEP PROCESS; ULTRA-THIN; UNIFORM DISTRIBUTION;

FILAMENTS (LAMP); MAGNETIC FILMS; RANDOM ACCESS STORAGE;

COPPER;

EID: 67349254824     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2015687     Document Type: Article

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