Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Fujii, T ^a,b   Kawasaki, M ^a,b   Sawa, A ^a,c   Akoh, H ^a,c   Kawazoe, Y ^b   Tokura, Y ^a,d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; HYSTERESIS; PHOTOLITHOGRAPHY; SINGLE CRYSTALS; STRONTIUM COMPOUNDS; TRANSPORT PROPERTIES;

FORWARD BIASED STRESSES; LOW RESISTANCE STATE (LRS); RESISTANCE SWITCHING; SCHOTTKY JUNCTION;

HETEROJUNCTIONS;

EID: 19744383252     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1845598     Document Type: Article

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