Effect of bottom electrode of ReRAM with Ta2O 5/TiO2 stack on RTN and retention

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Terai, M ^a   Sakotsubo, Y ^a   Saito, Y ^a   Kotsuji, S ^a   Hada, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CURRENT FLUCTUATIONS; CURRENT STABILITY; HIGH TEMPERATURE STRESS; HIGH THERMAL STABILITY; LOW NOISE; MULTI-LEVEL; PT ELECTRODE; RANDOM TELEGRAPH NOISE; TI DIFFUSION; TIO; TRAP DENSITY;

ELECTRON DEVICES; PLATINUM; RANDOM ERRORS; TELEGRAPH; THERMOGRAVIMETRIC ANALYSIS;

TANTALUM;

EID: 77952337061     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424226     Document Type: Conference Paper

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