A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Chien, W C ^a   Chen, Y R ^a   Chen, Y C ^a   Chuang, Alfred T H ^a   Lee, F M ^a   Lin, Y Y ^a   Lai, E K ^a   Shih, Y H ^a   Hsieh, K Y ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLING ENDURANCE; DATA RETENTION; FAST SWITCHING; FIELD ENHANCEMENT; READ DISTURB; SELF-ALIGNED; SWITCHING MECHANISM;

ELECTRIC FIELDS; ELECTRON DEVICES;

TITANIUM NITRIDE;

EID: 79951822605     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703390     Document Type: Conference Paper

References (5)

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2. C.H. Ho, E.K. Lai, M.D. Lee, C.L. Pan, Y.D. Yao, K.Y. Hsieh, Rich Liu, and Chih-Yuan Lu, "A Highly Reliable Self-Aligned Graded Oxide WOx Resistance Memory: Conduction Mechanisms and Reliability," Symp. VLSI Tech., pp. 228-229, 2007.
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5. X /W ReRAM with Excellent Retention and Low Switching Current," SSDM., E-8-4, 2010.